Results 201 to 210 of about 24,430 (263)

Compact modulators on silicon nitride waveguide platform via micro-transfer printing of thin-film lithium niobate. [PDF]

Sci Rep
Badri SH, Kotlyar MV, Das R, Arafat Y, Moynihan O, Corbett B, O'Faolain L, Ghosh S.   +7 more
europepmc   +1 more source

Forged by charge: polaron-induced matrix formation in silicon nitride conversion-type anodes for lithium-ion batteries.

J Mater Chem A Mater
Cottom J, Hückmann L, Meyer J, Olsson E.   +3 more
europepmc   +1 more source

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Silicon Nitride Nanosieve Membrane

Nano Letters, 2004
An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with another silicon nitride layer.
Tong, D.H., Jansen, Henricus V., Gadgil, V.J., Bostan, C.G., Berenschot, Johan W., van Rijn, C.J.M., Elwenspoek, Michael Curt   +6 more
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High‐Performance Silicon Nitride Materials

Angewandte Chemie International Edition in English, 1989
AbstractThe past decade has seen greatly increased interest in ceramic materials with special combinations of properties. Their hardness, high resistance to abrasive and erosive wear, and their good corrosion resistance when used under extreme mechanical and thermal conditions have made ceramics increasingly attractive for applications in mechanical ...
Cornelia Boberski, Rainer Hamminger, Marcell Peuckert, Fritz Aldinger, Reinhard Dillinger, Jürgen Heinrich, Jürgen Huber   +6 more
openaire   +1 more source

Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces

Thin Solid Films, 2003
Abstract The valence band electronic structure of silicon nitride (Si 3 N 4 ) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results,
Vladimir A Gritsenko, Alexandr V Shaposhnikov, W.M Kwok, Hei Wong, Georgii M Jidomirov   +4 more
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Boron nitride–silicon carbide interphase boundaries in silicon nitride–silicon carbide particulate composites

Journal of the European Ceramic Society, 2002
Abstract Interphase boundaries between SiC and h-BN grains in hot isostatically pressed Si3N4–SiC particulate composites made from both as-received powders and deoxidised powders, in which sub-micron size h-BN particles occur as a contaminant, have been characterised using transmission electron microscopy techniques.
Knowles, KM, Turan, Servet
openaire   +1 more source

Conduction in silicon nitride and silicon nitride-oxide films

Journal of Physics D: Applied Physics, 1970
The room-temperature current-voltage characterstics of vapour-deposited silicon nitride films and silicon dioxide-nitride composite structures have been investigated. It is observed that conduction is bulk-limited and conforms to the Poole-Frenkel electronic transport mechanism.
B Swaroop, P S Schaffer
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Anisotropy of Silicon Nitride with Aligned Silicon Nitride Whiskers

Journal of the American Ceramic Society, 1999
A model based on anisotropic sintering shrinkage of silicon nitride with aligned silicon nitride whisker seeds was built in order to provide an easy way to obtain information on how the large elongated grains were aligned. The method requires a simple measuring device for the information.
Dong‐Soo Park, Chang‐Won Kim
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Interphase boundaries between hexagonal boron nitride and beta silicon nitride in silicon nitride-silicon carbide particulate composites

Journal of the European Ceramic Society, 1997
Abstract Interphase boundaries between hexagonal boron nitride and β-Si 3 N 4 in hot isostatically pressed Si 3 N 4 -SiC particulate composites, in which boron nitride appears as a trace contaminant, have been examined using high resolution transmission electron microscopy.
Turan, Servet, Knowles, K. M.
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Silicon Nitride Integrated Quantum Photonics

2023 23rd International Conference on Transparent Optical Networks (ICTON), 2023
2023 23rd International Conference on Transparent Optical Networks (ICTON), July 2-6, 2023, Bucharest ...
Mnaymneh, Khaled, Yeung, Edith, Northeast, David B., Jin, Jeongwan, Laferrière, Patrick, Haffouz, Sofiane, Poole, Philip J., Dalacu, Dan, Williams, Robin L.   +8 more
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