Comparative study on the influence mechanism of He/Ar/N<sub>2</sub> plasma treatments on the high tensile stress of a multilayer silicon nitride film. [PDF]
Ning J +5 more
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Compact modulators on silicon nitride waveguide platform via micro-transfer printing of thin-film lithium niobate. [PDF]
Badri SH +7 more
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Unveiling the Advantages of Silicon Nitride Nanoparticle Anodes for Enhanced Cyclic Stability, Rate Performance, and Mechanical Robustness. [PDF]
Nemaga AW +4 more
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Effect of Silicon Nitride Coating on Titanium Surface: Biocompatibility and Antibacterial Properties. [PDF]
Tani A +7 more
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Application of Magnetic-Assisted Polishing Using Metal-Bonded Grinding Wheels for Machining Silicon Nitride Ball Bearings. [PDF]
Han SY, Lee SM, Kim HN, Ko JW, Kwak TS.
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Silicon Nitride Nanosieve Membrane
Nano Letters, 2004An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with another silicon nitride layer.
Tong, D.H. +6 more
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High‐Performance Silicon Nitride Materials
Angewandte Chemie International Edition in English, 1989AbstractThe past decade has seen greatly increased interest in ceramic materials with special combinations of properties. Their hardness, high resistance to abrasive and erosive wear, and their good corrosion resistance when used under extreme mechanical and thermal conditions have made ceramics increasingly attractive for applications in mechanical ...
Cornelia Boberski +6 more
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Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces
Thin Solid Films, 2003Abstract The valence band electronic structure of silicon nitride (Si 3 N 4 ) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results,
Vladimir A Gritsenko +4 more
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Abstract Interphase boundaries between SiC and h-BN grains in hot isostatically pressed Si3N4–SiC particulate composites made from both as-received powders and deoxidised powders, in which sub-micron size h-BN particles occur as a contaminant, have been characterised using transmission electron microscopy techniques.
Knowles, KM, Turan, Servet
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