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Conduction in silicon nitride and silicon nitride-oxide films
Journal of Physics D: Applied Physics, 1970The room-temperature current-voltage characterstics of vapour-deposited silicon nitride films and silicon dioxide-nitride composite structures have been investigated. It is observed that conduction is bulk-limited and conforms to the Poole-Frenkel electronic transport mechanism.
B Swaroop, P S Schaffer
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Anisotropy of Silicon Nitride with Aligned Silicon Nitride Whiskers
Journal of the American Ceramic Society, 1999A model based on anisotropic sintering shrinkage of silicon nitride with aligned silicon nitride whisker seeds was built in order to provide an easy way to obtain information on how the large elongated grains were aligned. The method requires a simple measuring device for the information.
Dong‐Soo Park, Chang‐Won Kim
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Journal of the European Ceramic Society, 1997
Abstract Interphase boundaries between hexagonal boron nitride and β-Si 3 N 4 in hot isostatically pressed Si 3 N 4 -SiC particulate composites, in which boron nitride appears as a trace contaminant, have been examined using high resolution transmission electron microscopy.
Turan, Servet, Knowles, K. M.
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Abstract Interphase boundaries between hexagonal boron nitride and β-Si 3 N 4 in hot isostatically pressed Si 3 N 4 -SiC particulate composites, in which boron nitride appears as a trace contaminant, have been examined using high resolution transmission electron microscopy.
Turan, Servet, Knowles, K. M.
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Silicon Nitride Integrated Quantum Photonics
2023 23rd International Conference on Transparent Optical Networks (ICTON), 20232023 23rd International Conference on Transparent Optical Networks (ICTON), July 2-6, 2023, Bucharest ...
Mnaymneh, Khaled +8 more
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2002
Silicon nitride ceramics is a generic term for a variety of alloys of Si3N4 with additional compounds necessary for a complete densification of the Si3N4 starting powder. They are heterogeneous, multicomponent materials characterised by the inherent properties of the crystalline modifications α and β of Si3N4 and the significant influence of the ...
Petzow, G., Herrmann, M.
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Silicon nitride ceramics is a generic term for a variety of alloys of Si3N4 with additional compounds necessary for a complete densification of the Si3N4 starting powder. They are heterogeneous, multicomponent materials characterised by the inherent properties of the crystalline modifications α and β of Si3N4 and the significant influence of the ...
Petzow, G., Herrmann, M.
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Powder Metallurgy, 1961
A method is described for preparing silicon nitride bodies of almost theoretical density. Silicon nitride powder is hot pressed with a small proportion of catalyst, preferably magnesium oxide or nitride, at 1850°C. The bodies have very high flexural strength up to high temperatures, and preliminary measurements of creep rate and thermal shock ...
G. G. DEELEY, J. M. HERBERT, N. C. MOORE
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A method is described for preparing silicon nitride bodies of almost theoretical density. Silicon nitride powder is hot pressed with a small proportion of catalyst, preferably magnesium oxide or nitride, at 1850°C. The bodies have very high flexural strength up to high temperatures, and preliminary measurements of creep rate and thermal shock ...
G. G. DEELEY, J. M. HERBERT, N. C. MOORE
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Materials Science Forum, 2008
Silicon nitride is one of the major structural ceramics that has been developed following many years of intensive research. It possesses high flexural strength, high fracture resistance, good creep resistance, high hardness and excellent wear resistance.
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Silicon nitride is one of the major structural ceramics that has been developed following many years of intensive research. It possesses high flexural strength, high fracture resistance, good creep resistance, high hardness and excellent wear resistance.
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Journal of the American Ceramic Society, 1985
Hot‐pressed Si 3 N 4 was joined using an Mgo‐A1 2 O 3 ‐SiO 2 glass composition chosen to approximate the oxide portion of the grain ...
M. L. MECARTNEY +2 more
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Hot‐pressed Si 3 N 4 was joined using an Mgo‐A1 2 O 3 ‐SiO 2 glass composition chosen to approximate the oxide portion of the grain ...
M. L. MECARTNEY +2 more
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Silicon Nitride-Silicon Dioxide Combinations
1971While it would be desirable to replace completely SiO2 by Si3N4, such structures exhibit hysteresis in surface behavior and charge instability due to the high number of surface charges, tunneling and trapping at the Si-Si3N4 interface as noted in the previous sections of this survey.
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Graphene on silicon-nitride photodetector
SPIE Micro + Nano Materials, Devices, and Applications 2019, 2019Even though graphene is a gapless material, it demonstrates strong interband absorption from a broad range of wavelengths between VIS and NIR. Recent photocurrent graphene-based detectors demonstrated strong photoresponse signal near the graphene/metal boundaries.
Varapnickas, Simonas +10 more
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