Results 31 to 40 of about 123,450 (287)

Research on Crack Propagation Mechanism of Silicon Nitride Ceramic Ball Bearing Channel Surface Based on Rolling Friction Experiment

open access: yesApplied Sciences
The application feedback on existing silicon nitride ceramic bearings and RCF experimental research all indicate that the primary failure mode of silicon nitride ceramic bearings is material spalling on the contact surface. Spalling failure occurs due to
Pengfei Wang   +5 more
doaj   +1 more source

Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons.

open access: yesPLoS ONE, 2014
Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology.
Johan Jaime Medina Benavente   +3 more
doaj   +1 more source

Optomechanical and Crystallization Phenomena Visualized with 4D Electron Microscopy: Interfacial Carbon Nanotubes on Silicon Nitride [PDF]

open access: yes, 2010
With ultrafast electron microscopy (UEM), we report observation of the nanoscopic crystallization of amorphous silicon nitride, and the ultrashort optomechanical motion of the crystalline silicon nitride at the interface of an adhering carbon nanotube ...
Flannigan, David J., Zewail, Ahmed H.
core   +2 more sources

Laser Metal Powder Deposition of Titanium Microalloyed HSLA Steel FeC0.12Si0.25Mn1.3

open access: yesAdvanced Engineering Materials, EarlyView.
This study investigates the additive manufacturing of titanium‐doped high‐strength low‐alloy (HSLA) steel via laser metal deposition. It reveals distinct process‐structure relationships for elemental powder blends compared to prealloyed feedstocks.
Olaf Stelling   +2 more
wiley   +1 more source

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient [PDF]

open access: yes, 1974
A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide.
Cohen, R. A., Wheeler, R. K.
core   +1 more source

Reduction of Oxide Inclusions During the High‐Frequency Welding of Steel via a Nonthermal Ar/H2 Plasma Jet

open access: yesAdvanced Engineering Materials, EarlyView.
High‐frequency (HF) welding of steel is limited by oxide inclusions that degrade weld quality. This study demonstrates, for the first time, the integration of a nonthermal Ar/H2 dielectric barrier discharge (DBD) plasma jet into HF welding. Local plasma treatment provides effective shielding and in‐situ oxide reduction, resulting in markedly fewer and ...
Viktor Udachin   +4 more
wiley   +1 more source

On the influence of interface charging dynamics and stressing conditions in strained silicon devices

open access: yesScientific Reports, 2017
The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results.
Irene Olivares   +2 more
doaj   +1 more source

Modelling of High-Power Grinding for Sintering Activation of Silicon Nitride Powders

open access: yesНаука и техника, 2004
The influence of milling conditions (acceleration of milling bodies, ball milling time and medium) on specific surface of silicon nitride powders and iron content in them has been studied in the paper. The sintering kinetics of the samples being prepared
E. S. Goloubtsova, B. A. Kaledin
doaj   +1 more source

Defect Grating Simulations: Perturbations with AFM-like Tips [PDF]

open access: yes, 2006
A defect grating in a silicon on insulator waveguide is simulated. We consider spectral changes in the optical transmission when a thin silicon nitride or silicon tip is scanned across the defect.
Hammer, M., Stoffer, R.
core   +1 more source

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

open access: yesAdvanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source

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