Results 31 to 40 of about 49,738 (310)

Silicon-based photonic integration beyond the telecommunication wavelength range [PDF]

open access: yes, 2014
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the ...
Malik, Aditya   +62 more
core   +1 more source

Hybrid thin-film lithium niobate silicon nitride photonic integrated circuits

open access: yes, 2022
Prather, Dennis W.For the past 30 years, the Silicon on Insulator (SOI) platform has dominated the field of photonic integrated circuits. Silicon is hugely abundant, optically capable, and has had decades of research performed by the semiconductor ...
Hurley, Cooper
core   +1 more source

Influence of Surface Finish on the Tribological Performance of AlTiBN Coatings Deposited on Forming Tools

open access: yesAdvanced Engineering Materials, EarlyView.
Aluminum and nitride coatings are used in industry because they are hard, resist wear, and protect against oxidation. Adding boron can improve friction behavior and other properties. This study tests coatings on surfaces with different finishes. Results show smoother surfaces perform better, while rough ones wear faster, although coatings can reduce ...
Adrián Claver   +9 more
wiley   +1 more source

Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons.

open access: yesPLoS ONE, 2014
Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology.
Johan Jaime Medina Benavente   +3 more
doaj   +1 more source

Designing Polymer Nanocomposites for X‐Ray Shielding: Mechanisms, Architectures, and Scalable Processing

open access: yesAdvanced Engineering Materials, EarlyView.
This review highlights advances in lightweight, lead‐free polymer nanocomposites for diagnostic X‐ray shielding. By linking filler chemistry, dispersion, architecture, and photon interaction mechanisms, it establishes structure–performance relationships guiding material design.
Aklilu G. Messele   +2 more
wiley   +1 more source

A feature extraction method for silicon nitride bearing microcracks based on adaptive gamma and multi-width dynamic thresholds [PDF]

open access: yesAIP Advances
This study aims to address the problems of localized indistinctness, low contrast, and unclear feature recognition in images of silicon nitride bearing surfaces by proposing adaptive gamma variation and multi-breadth dynamic threshold segmentation ...
Zhijuan Deng   +5 more
doaj   +1 more source

Strength and Fatigue of Silicon Nitride/Silicon Nitride and Alumina/Alumina Joints

open access: yesJSME international journal. Ser. A, Mechanics and material engineering, 1994
To investigate the fatigue behavior of bonded ceramics, Si 3 N 4 /Si 3 N 4 and Al 2 O 3 /Al 2 O 3 joint specimens were three-point-fatigue-tested under static and cyclic loading at temperatures ranging from 300 to 1 038 K in air. Fractographic observation was also carried out using SEM after the fatigue test.
SASAKI, Kazunori   +2 more
openaire   +3 more sources

On-Chip Integrated Label-Free Optical Biosensing [PDF]

open access: yes, 2013
This thesis investigates the design and implementation of a label-free optical biosensing system utilizing a robust on-chip integrated platform. The goal has been to transition optical micro-resonator based label-free biosensing from a laborious and ...
Sendowski, Jacob Benjamin
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

On the influence of interface charging dynamics and stressing conditions in strained silicon devices

open access: yesScientific Reports, 2017
The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results.
Irene Olivares   +2 more
doaj   +1 more source

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