Results 311 to 320 of about 100,297 (354)

Silicon-on-Insulator and Porous Silicon

2004
Silicon is by far the most widely used semiconductor material. It is abundant in the earth’s crust and relatively easy to convert into a high-purity single crystal. Unlike some other semiconductor materials, silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown ...
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Frontiers of silicon-on-insulator

Journal of Applied Physics, 2003
Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. After more than three decades of materials research and device studies, SOI wafers have entered into the mainstream of semiconductor electronics.
G. K. Celler, Sorin Cristoloveanu
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Silicon-on-insulator microphotonic devices

SPIE Proceedings, 2006
SOI microwaveguides and associated devices (splitters, turns, ...) are used for light distribution. Rib SOI geometries obtained by shallow etching of the silicon film offer definite advantages for the integration of active devices while fulfilling efficiency and compactness.
Laurent Vivien, Eric Cassan, Delphine Marris-Morini, Sylvain Maine, Mathieu Rouvière, Jean-François Damlencourt, Jean-Marc Fédéli, Anatole Lupu, Daniel Pascal, Xavier Le Roux, Suzanne Laval   +10 more
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Silicon on insulator optoelectronics

2001
These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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Polycrystalline Silicon Grown on Porous Silicon-on-Insulator Substrates

MRS Proceedings, 1996
AbstractInexpensive full-wafer SOI substrates are appealing for various applications such as ULSI. As an attempt to achieve this goal, low-temperature deposition of silicon on novel porous Si-on-insulator (PSOI) substrates was performed in this work.
Klaus Y.J. Hsu, C. H. Lee, C. C. Yeh
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Silicon-on-diamond: An advanced silicon-on-insulator technology

Diamond and Related Materials, 2005
Abstract Silicon-on-diamond (SOD) technology is proposed as an advanced alternative to conventional silicon-on-insulator (SOI) technology. In SOD, the electrical insulator is diamond, the best thermal conductor in nature. In our SOD concept, the diamond film is highly oriented (HOD), 75–100 μm thick and serves as an electrical insulator, heat ...
A. Aleksov, X. Li, N. Govindaraju, J.M. Gobien, S.D. Wolter, J.T. Prater, Z. Sitar   +6 more
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Splendid isolation [silicon on insulator]

Engineering & Technology, 2006
This paper discusses the growing popularity of silicon on insulator (SOI) technology in the semiconductor industry over the past few years. Of the total share of SOI wafer sales, a small percentage goes to SIMOX (separation by implanted oxygen) process while a large 80% goes to the rival technology developed at Grenoble-based LETI, called Smart Cut ...
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Passive broadband silicon-on-insulator polarization splitter

Optics Letters, 2007
We present the implementation of a novel wavelength independent polarization splitter on a silicon-on-insulator platform. The waveguide splitter is based on a zero-order arrayed waveguide grating (AWG) configuration. The splitting function is realized by employing cladding stress-induced birefringence. The device demonstrated a TE to TM splitting ratio
Ye, W. N., Xu, D. -X., Janz, Siegfried, Waldron, Philip, Cheben, Pavel, Tarr, N. G.   +5 more
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Supercritical strained silicon on insulator

Materials Science and Engineering: B, 2006
Strained silicon on insulator (SSOI) technology has emerged as an attractive option for the introduction of wafer-scale strain into upcoming CMOS technology nodes. Two key breakthroughs which have made this possible are discussed in this paper. First, the development of SSOI without a SiGe layer in the final wafer has eliminated significant CMOS ...
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Silicon-on-Insulator Pin Diodes.

1987
Abstract : Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs.
Stephen Wu, Ted Letavic, Ronald J. Gutmann, Edward W. Maby   +3 more
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