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Frontiers of silicon-on-insulator
Journal of Applied Physics, 2003Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. After more than three decades of materials research and device studies, SOI wafers have entered into the mainstream of semiconductor electronics.
George K. Celler, Sorin Cristoloveanu
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IEEE Journal on Emerging and Selected Topics in Circuits and Systems
This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends.
Robert Nericua +4 more
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This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends.
Robert Nericua +4 more
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Silicone insulation in submarines — Toxicity
Electrical Engineering, 1948Shipboard electrical installations present special problems for insulating materials that may not exist in shore installations. As naval vessels necessarily are built to a high degree of compartmentation requiring forced ventilation and also have large capacity power plants installed in relatively small spaces, there is perhaps more insulation per ...
H. P. Walker, T. E. Shea
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Optomechanical cavities in silicon-on-insulator
Integrated Optics: Devices, Materials, and Technologies XXVII, 2023Integrated optomechanical cavities allow precise control of optical and mechanical modes and enable strong photonphonon interactions in micron-scale volume, key for the implementation of microwave-photonic oscillators and quantum transducers. Silicon photonics provides low production cost and compatibility with the state-of-art optoelectronic circuitry.
Zhang, Jianhao +7 more
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Bonding of silicon wafers for silicon-on-insulator
Journal of Applied Physics, 1988Several aspects of a new silicon-on-insulator technique utilizing bonding of oxidized silicon wafers were investigated. The bonding was achieved by heating in an inert atmosphere a pair of wafers with hydrophilic surfaces contacted face-to-face. A quantitative method for the evaluation of the surface energy of the bond based on crack propagation theory
G. Goetz +3 more
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Monolithic Barium Titanate Modulators on Silion-on-Insulator Substrates
Conference on Lasers and Electro-Optics, 2023We demonstrate monolithic Barium Titanate (BTO) - based Mach - Zehnder Interferometers (MZIs) in thin film epitaxial BTO RF-sputtered on silicon-on-insulator sub-strates.
Z. Dong +5 more
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Physics Bulletin, 1985
There has always been interest in the growth of silicon–on–insulators (soi), usually on sapphire, to give increased resistance to nuclear radiation for space and military applications. However, recently, new techniques for growth have been researched, and the silicon device interest has widened as the potential of insulating substrates for use with ...
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There has always been interest in the growth of silicon–on–insulators (soi), usually on sapphire, to give increased resistance to nuclear radiation for space and military applications. However, recently, new techniques for growth have been researched, and the silicon device interest has widened as the potential of insulating substrates for use with ...
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Silicon-on-insulator technology
IEE Proceedings I Solid State and Electron Devices, 1986The last few years have seen considerable progress in the development of techniques for producing silicon-on-insulator (SOI) substrates suitable for fabrication of high performance devices/circuits. Among the most promising of the new ideas are those based on buried dielectric formation by ion implantation (oxygen or nitrogen), recrystallisation of ...
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Silicon-on-Insulator and Porous Silicon [PDF]
, 2004 Silicon is by far the most widely used semiconductor material. It is abundant in the earth’s crust and relatively easy to convert into a high-purity single crystal. Unlike some other semiconductor materials, silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown ...
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Growth of GaAs on polycrystalline silicon-on-insulator
Journal of Materials Science: Materials in Electronics, 2003The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si.
Riikonen, J. +5 more
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