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Development of silicon-on-insulator waveguide technology
SPIE Proceedings, 2004An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed.
Harjanne, Mikko +5 more
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International Conference on Transparent Optical Networks, 2018
A silicon-on-insulator fundamental to first-order mode converter with both polarization capability is proposed. The device is based on ditching half-width of propagating silicon waveguide with a silicon nitride substrip of length 0.8 μm.
Basma E. Abu-elmaaty +4 more
semanticscholar +1 more source
A silicon-on-insulator fundamental to first-order mode converter with both polarization capability is proposed. The device is based on ditching half-width of propagating silicon waveguide with a silicon nitride substrip of length 0.8 μm.
Basma E. Abu-elmaaty +4 more
semanticscholar +1 more source
Silicon on insulator optoelectronics [PDF]
, 2001 These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure
Semiconductors, 2012Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in γ-ray irradiation conditions.
A. D. Mokrushin +2 more
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Silicon-on-diamond: An advanced silicon-on-insulator technology
Diamond and Related Materials, 2005Abstract Silicon-on-diamond (SOD) technology is proposed as an advanced alternative to conventional silicon-on-insulator (SOI) technology. In SOD, the electrical insulator is diamond, the best thermal conductor in nature. In our SOD concept, the diamond film is highly oriented (HOD), 75–100 μm thick and serves as an electrical insulator, heat ...
X. Li +7 more
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Novel silicon-on-insulator structures for silicon waveguides
IEEE SOS/SOI Technology Conference, 2003Summary form only given. The authors discuss optical waveguiding at a wavelength of 1.3 microns in a separation by implantation of oxygen (SIMOX) sample with a silicon top layer about two microns thick on a buried SiO/sub 2/ layer about 4000 AA thick.
E. Cortesi, F. Namavar, Richard A. Soref
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1989
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Silicone electrical insulation
Proceedings of the IEE Part A: Power Engineering, 1959Silicone fluids, compounds, rubbers and resins are described in terms of their chemical structure and physical properties, alone or in combination with inorganic insulating materials. There follows a brief review of thermal endurance evaluation and the position of siliconeinsulation in British and other Standards.
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Silicon-on-Insulator Waveguides
2013While developed for the needs of microelectronics, the silicon-on-insulator (SOI) wafers are excellent substrates for optical waveguides. SOI is a kind of structures formed by a thin layer of crystalline silicon (Si) on an insulating layer, which typically is silicon dioxide (SiO2).
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Crystalline silicon on insulators by graphoepitaxy
1979 International Electron Devices Meeting, 1979Graphoepitaxy is a new technique that uses artificial surface relief structures to induce crystallographic orientation in thin films. A simple model for graphoepitaxy is presented which predicts that materials that can be deposited on smooth amorphous substrates to produce a crystalline texture can be uniformly oriented by appropriate surface relief ...
Henry I. Smith +3 more
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