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Analysis of porous silicon silicon-on-insulator materials
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991Abstract Silicon-on-insulator materials are being used in the development of radiation hard VLSI electronic circuits and one promising route is the use of porous silicon. Porous silicon is produced by electrochemically etching selected regions of silicon wafers to produce volumes of highly reactive porous silicon which can be converted to dielectric ...
M.C. Briggs +4 more
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Silicones for outdoor insulator maintenance [PDF]
Conference Record of the the 2002 IEEE International Symposium on Electrical Insulation (Cat. No.02CH37316), 2003 This paper reviews outdoor insulator contamination problems and presents the variety of silicone based maintenance solutions from a historical perspective, from early silicone greases to the latest RTV elastomer products. Results of a current study on commercially available RTV coatings is compared in terms of specifications, actual uncured and cured ...
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Optical Characterization of Silicon-On-Insulator
MRS Proceedings, 1996AbstractA new technique, referred to as the “n&k Method”, is used to characterize the thin films comprising Silicon-on-Insulator (SOI). With the “n&k Method”, a non-destructive robust measurement of the thickness of both the crystalline silicon top-layer and the buried oxide under-layer, the spectra of refractive index (n), and extinction ...
A. Auberton-Herve +4 more
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Recrystallization of amorphous silicon on insulator
Materials Chemistry and Physics, 1993Abstract The structure and morphology as well as the etch velocity of silicon on silicon nitride are studied prior to and after zone melting recrystallization by observing the transmission electron micrographs and diffraction patterns.
G.D. Beshkov, N.B. Velchev
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Semiconductors, 2005
The effect of additional implantation of hydrogen ions into the region of the interface between the split-off silicon layer and the buried insulator in silicon-on-insulator structures and subsequent high-temperature annealing on the parameters of the structures and their radiation resistance is studied.
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The effect of additional implantation of hydrogen ions into the region of the interface between the split-off silicon layer and the buried insulator in silicon-on-insulator structures and subsequent high-temperature annealing on the parameters of the structures and their radiation resistance is studied.
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A silicon-on-insulator quantum wire
Solid-State Electronics, 1996Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the
Vincent Bayot +3 more
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A submicrometre silicon-on-insulator resonator for ultrasound detection
Nature, 2020Rami Shnaiderman +5 more
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Silicone coating project [insulators]
Conference Record of 1995 Annual Pulp and Paper Industry Technical Conference, 2002An account of Public Service Company of Oklahoma's (PSO's) experience with substation insulator and bushing surface contamination prevention is described. The wet flashovers of high voltage insulators and bushings exposed to a corrosive atmosphere are discussed. Frequent washing and silicone coating solutions are compared.
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Insulating Silicon Nitride Films
1991In insulating silicon nitride films, the dielectrical properties of silicon nitride are of primary importance, whereas in encapsulating and passivating silicon nitride films, the chemical barrier properties are utilized. Of course, the same film can serve more than one application.
Eberhard F. Krimmel +3 more
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