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Bonding of silicon wafers for silicon-on-insulator
Journal of Applied Physics, 1988Several aspects of a new silicon-on-insulator technique utilizing bonding of oxidized silicon wafers were investigated. The bonding was achieved by heating in an inert atmosphere a pair of wafers with hydrophilic surfaces contacted face-to-face. A quantitative method for the evaluation of the surface energy of the bond based on crack propagation theory
G. Goetz +3 more
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Silicone insulation in submarines — Toxicity
Electrical Engineering, 1948Shipboard electrical installations present special problems for insulating materials that may not exist in shore installations. As naval vessels necessarily are built to a high degree of compartmentation requiring forced ventilation and also have large capacity power plants installed in relatively small spaces, there is perhaps more insulation per ...
H. P. Walker, T. E. Shea
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Physics Bulletin, 1985
There has always been interest in the growth of silicon–on–insulators (soi), usually on sapphire, to give increased resistance to nuclear radiation for space and military applications. However, recently, new techniques for growth have been researched, and the silicon device interest has widened as the potential of insulating substrates for use with ...
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There has always been interest in the growth of silicon–on–insulators (soi), usually on sapphire, to give increased resistance to nuclear radiation for space and military applications. However, recently, new techniques for growth have been researched, and the silicon device interest has widened as the potential of insulating substrates for use with ...
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Silicon-on-insulator technology
IEE Proceedings I Solid State and Electron Devices, 1986The last few years have seen considerable progress in the development of techniques for producing silicon-on-insulator (SOI) substrates suitable for fabrication of high performance devices/circuits. Among the most promising of the new ideas are those based on buried dielectric formation by ion implantation (oxygen or nitrogen), recrystallisation of ...
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Silicon-on-Insulator and Porous Silicon [PDF]
, 2004 Silicon is by far the most widely used semiconductor material. It is abundant in the earth’s crust and relatively easy to convert into a high-purity single crystal. Unlike some other semiconductor materials, silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown ...
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International Conference on Transparent Optical Networks, 2018
A silicon-on-insulator fundamental to first-order mode converter with both polarization capability is proposed. The device is based on ditching half-width of propagating silicon waveguide with a silicon nitride substrip of length 0.8 μm.
Basma E. Abu-elmaaty +4 more
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A silicon-on-insulator fundamental to first-order mode converter with both polarization capability is proposed. The device is based on ditching half-width of propagating silicon waveguide with a silicon nitride substrip of length 0.8 μm.
Basma E. Abu-elmaaty +4 more
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Growth of GaAs on polycrystalline silicon-on-insulator
Journal of Materials Science: Materials in Electronics, 2003The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si.
Riikonen, J. +5 more
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Silicon on insulator optoelectronics [PDF]
, 2001 These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure
Semiconductors, 2012Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in γ-ray irradiation conditions.
A. D. Mokrushin +2 more
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Monolithic Barium Titanate Modulators on Silion-on-Insulator Substrates
Conference on Lasers and Electro-Optics, 2023We demonstrate monolithic Barium Titanate (BTO) - based Mach - Zehnder Interferometers (MZIs) in thin film epitaxial BTO RF-sputtered on silicon-on-insulator sub-strates.
Zuoming Dong +5 more
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