Results 51 to 60 of about 29,213 (196)

Influence of optical radiation parameters on the amplitude characteristics of silicon photoelectron multipliers

open access: yesВесці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2020
At present, silicon photoelectronic multipliers with a low voltage, high sensitivity in the visible and near infrared spectral regions, and large amplification factors are often used to record optical radiation in a wide range of intensities of the ...
M. A. Asayonak   +3 more
doaj   +1 more source

The Physics of Mind-Matter Interaction at a Distance [PDF]

open access: yes, 2017
The aim of this work is identification and localisation of the interaction between mind and matter, specifically with respect to random number generators, and identification of the type of energy that can alter the degree of randomness of bit-string ...
Giroldini, William   +3 more
core   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong   +6 more
wiley   +1 more source

Silicon Photomultipliers: Characterization and Applications

open access: yes, 2012
Silicon Photo-Multipliers (SiPMs henceover) are photo-detectors based on a technology originally invented in Russia (Akindinov et al., 1997). They essentially consist of an array of p-n junctions operated beyond the breakdown voltage (McKay, 1954), in a Geiger-Muller (G-M) regime (Oldham et al., 1972), with typical gain of the order of 106 and on-cell ...
Ramilli, M   +4 more
openaire   +4 more sources

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

open access: yesInstruments, 2017
The silicon photomultiplier (SiPM) is a promising semiconductor device for low-level light detection. The recovery time, or the photon-counting rate of the SiPM is essential for high-flux photon detection in such applications as photon counting computer ...
Jiali Jiang   +5 more
doaj   +1 more source

GYAGG/6LiF composite scintillation screen for neutron detection

open access: yesNuclear Engineering and Technology, 2022
Composite scintillation screens on a base of Gd1.2Y1.8Ga2.5Al2.5O12:Ce (GYAGG) scintillator have been evaluated for neutron detection. Besides the powdered scintillator, the composite includes 6LiF particles; both are merged with a binder and deposited ...
A. Fedorov   +14 more
doaj   +1 more source

A Mechanistic Blueprint for Fast, High‐Yield Green Scintillators Using Conjugated Polymer–Nanocrystal Composites

open access: yesAdvanced Functional Materials, EarlyView.
Conjugated polymer–nanocrystal composites are investigated to develop fast, high‐yield green scintillators. The polymer F8BT enables efficient, ultrafast emission, while blends with non‐emitting HfO2 nanocrystals and luminescent CdZnS/ZnS quantum dots reveal distinct sensitization mechanisms.
Chenger Wang   +13 more
wiley   +1 more source

Shortened Acquisition Duration for Brain Tumor 11C-Methionine Positron Emission Tomography on Silicon Photomultiplier Positron Emission Tomography/Computed Tomography

open access: yesApplied Sciences
Positron emission tomography/computed tomography (PET/CT) scanners equipped with silicon photomultiplier detectors offer superior sensitivity and count-rate performance.
Takato Inomata   +9 more
doaj   +1 more source

Development of low-cost, compact, real-time, and wireless radiation monitoring system in underwater environment

open access: yesNuclear Engineering and Technology, 2018
In this study, an underwater radiation detector was built using a GAGG(Ce) scintillator and silicon photomultiplier to establish an underwater radiation exposure monitoring system. The GAGG(Ce) scintillator is suitable for small radiation detectors as it
Jeong Ho Kim, Ki Hyun Park, Koan Sik Joo
doaj   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li   +5 more
wiley   +1 more source

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