Results 351 to 360 of about 170,323 (403)
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Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications
SPIE Proceedings, 1991Si/Si02 and Si/Si3N4 multilayers have been fabricated using a locally made reactive diode if-sputtering systern. 'Ihe layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target and argon as sputtering gas.
Boher, Pierre +7 more
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Additive Manufacturing with Ultraviolet Curable Silicones Containing Carbon Black
, 2018Additive manufacturing techniques for ultraviolet (UV) curable silicones are investigated using a high-pressure extrusion apparatus.
A. PorterDaniel +3 more
semanticscholar +1 more source
Annual Review of Plant Physiology and Plant Molecular Biology, 1999
▪ Abstract Silicon is present in plants in amounts equivalent to those of such macronutrient elements as calcium, magnesium, and phosphorus, and in grasses often at higher levels than any other inorganic constituent. Yet except for certain algae, including prominently the diatoms, and the Equisetaceae (horsetails or scouring rushes), it is not ...
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▪ Abstract Silicon is present in plants in amounts equivalent to those of such macronutrient elements as calcium, magnesium, and phosphorus, and in grasses often at higher levels than any other inorganic constituent. Yet except for certain algae, including prominently the diatoms, and the Equisetaceae (horsetails or scouring rushes), it is not ...
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Physical Review Letters, 1990
The presence of Cu atoms in p-type Si is detected via their characteristic electric-field gradients measured at the radioactive acceptor $^{111}\mathrm{In}$${/}^{111}$Cd by the perturbed \ensuremath{\gamma}\ensuremath{\gamma} angular correlation technique.
Keller, R. +5 more
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The presence of Cu atoms in p-type Si is detected via their characteristic electric-field gradients measured at the radioactive acceptor $^{111}\mathrm{In}$${/}^{111}$Cd by the perturbed \ensuremath{\gamma}\ensuremath{\gamma} angular correlation technique.
Keller, R. +5 more
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Silicon Photonics: silicon nitride versus silicon-on-insulator
Optical Fiber Communication Conference, 2016Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. Silicon nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses the relative benefits of both platforms.
Bart Kuyken +9 more
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Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
Technical Physics Letters, 2018Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are ...
Vladimir A. Gritsenko +3 more
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Non-toxic, anti-fouling silicones with variable PEO–silane amphiphile content
, 2016Non-toxic silicone coatings with improved resistance to diatom slime formation were prepared by simple blending and curing with a poly(ethylene oxide) (PEO)–silane amphiphile: α-(ethylene oxide)3Si-(CH2)2-oligodimethylsiloxane13-block-poly(ethylene oxide)
FaÿFabienne +4 more
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ACS Applied Materials and Interfaces, 2014
Three types of commercially derived methylsilicone materials, Sylgard-184, Q(V)Q(H) (an MQ-based silicone containing no dimethylsiloxane, D units), and D(V)D(H) (a D-based silicone with no additives), were judiciously chosen to study the conditions under
L. Nguyen +6 more
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Three types of commercially derived methylsilicone materials, Sylgard-184, Q(V)Q(H) (an MQ-based silicone containing no dimethylsiloxane, D units), and D(V)D(H) (a D-based silicone with no additives), were judiciously chosen to study the conditions under
L. Nguyen +6 more
semanticscholar +1 more source
The donor concentration in silicon implanted silicon and silicon on sapphire [PDF]
IEEE SOS/SOI Technology Conference, 2003 Summary form only given. The effective number of carriers in self-implanted silicon on sapphire is studied. The penetration of the materials by the double solid phase epitaxy method (DSPE) is discussed. In order to measure the depth distribution of the implantation-induced donors, silicon was implanted in 2 ohm cm n ...
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Rediscovering Silicones: “Unreactive” Silicones React with Inorganic Surfaces
Langmuir, 2011Chemical reactions of linear trimethylsilyl-terminated poly(dimethylsiloxane)s with the surfaces of oxidized silicon, titanium, aluminum, and nickel are reported.
Thomas J Mccarthy
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