Results 251 to 260 of about 2,996,453 (335)

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

Advanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

Very fast simulated re-annealing [PDF]

L. Ingber
core  

Optimizing Nutritional Decisions: A Particle Swarm Optimization-Simulated Annealing-Enhanced Analytic Hierarchy Process Approach for Personalized Meal Planning. [PDF]

Nutrients
Sarani Rad F, Amiri M, Li J.
europepmc   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Robot Calibration Sampling Data Optimization Method Based on Improved Robot Observability Metrics and Binary Simulated Annealing Algorithm. [PDF]

Sensors (Basel)
Jia H, Zeng H, Zhang J, Wang X, Lu Y, Yu L.   +5 more
europepmc   +1 more source

Simulated Annealing

Journal of Japan Society for Fuzzy Theory and Systems, 1997
openaire   +2 more sources

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

Advanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli, Dhanush Patil, Libin Yang, M. Taylor Sobczak, Anshul Kulkarni, Xiao Sun, Arunachalam Ramanathan, Tiantian Li, Ramaraja P. Ramasamy, Jason J. Locklin, Yanyu Chen, Xianqiao Wang, Arunachala Mada Kannan, Kenan Song   +13 more
wiley   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

Advanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho, Ming‐Hung Wu, Yu‐De Lin, Po‐Chun Yeh, Kai Ni, Wen‐Yueh Jang, Tuo‐Hung Hou   +6 more
wiley   +1 more source

Upscaling Pulsed Laser Fragmentation in Liquids by Advanced Free‐Flow Setups

Advanced Materials Technologies, EarlyView.
Advanced flow setups providing thin colloid films are introduced to upscale pulsed laser fragmentation in liquids for sustainable nanoparticle synthesis. Their potential is demonstrated by yielding remarkably small ZnO nanoparticles of <7 nm. Numerical simulations complement the study, revealing that the superior performance can be attributed to ...
Jan Lino Kricke, Zongwen Fu, Sebastian Burgmann, Uwe Janoske, Carlos Doñate‐Buendía, Bilal Gökce   +5 more
wiley   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

Advanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee, Taebin Lim, Seungho Lee, Sunaina Priyadarshi, Jin Jang   +4 more
wiley   +1 more source