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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

International Symposium on Power Semiconductor Devices and IC's, 2014
P. Moens   +16 more
semanticscholar   +1 more source

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

, 2014
Mattia Capriotti   +10 more
semanticscholar   +1 more source

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