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Design of 50-Nm Vertical MOSFET Incorporating a Dielectric Pocket

open access: yesIEEE Transactions on Electron Devices, 2004
A new architecture for a vertical MOS transistor is proposed that incorporates a so-called dielectric pocket (DP) for suppression of short channel effects and bulk punch-through.
Stephen Hall, P Ashburn, C H de Groot
exaly   +2 more sources
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Amniotic Fluid Index Versus Single Deepest Vertical Pocket: A Meta-Analysis of Randomized Controlled Trials

International Journal of Gynecology and Obstetrics, 2009
Ashraf F. Nabhan
exaly  

Reference Values for the Single Deepest Vertical Pocket to Assess the Amniotic Fluid Volume in the Second and Third Trimesters of Pregnancy

Journal of Perinatal Medicine, 2016
Taciana Mara Rodrigues da Cunha Caldas   +2 more
exaly  

A Novel 50 nm Vertical MOSFET With a Dielectric Pocket

Solid-State Electronics, 2006
S K Banerjee
exaly  

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