Results 231 to 240 of about 274,489 (274)

A dendritic nanocatalyst (Fe₃O₄@SiO₂@DETA-TMD) for eco-friendly synthesis of Pyrano[3,2-c]chromene-3-carbonitriles. [PDF]

Sci Rep
Mirza M, Bodaghifard MA, Darvish F.
europepmc   +1 more source

Prognostic impact of high-risk plaque morphology and impaired physiology in untreated non-culprit coronary lesions: a systematic review and meta-analysis. [PDF]

Int J Cardiol Heart Vasc
Acerbo V, Cesaro A, Biccirè FG, Sio V, Capolongo A, Monaco MG, Moscarella E, Gragnano F, Pelliccia F, Prati F, Dobrev D, Calabrò P.   +11 more
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Wpływ warstw pośrednich SiO$_{2}$ i SiO$_{2}$-TiO$_{2}$ na przyczepność stop tytanu Ti6AI4V : porcelana dentystyczna

, 2005
Bieniaś, Jarosław, Surowska, Barbara, Walczak, Mariusz, Stoch, Anna, Matraszek, Halina   +4 more
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Vpliv urejenosti strukture SiO[spodaj]2 na fotokatalitsko aktovnost SiO[spodaj]2/TiO[spodaj]2 tankih plasti

, 2011
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Photoluminescence from SiO₂/Si/SiO₂structures

Journal of Physics: Condensed Matter, 2003
Si layers were developed on pre-oxidized Si wafers by decomposition of silane in a low pressure chemical vapour deposition reactor. By keeping the deposition time constant (2 min) three sets of samples were fabricated at deposition temperatures equal to 580, 610 and 625 °C.
P Photopoulos, A G Nassiopoulou
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$\text{SiO}_{2}/\text{SiO}_{2}$ Bonding Technology Research on Wafer-level 3D Stacking

2021 22nd International Conference on Electronic Packaging Technology (ICEPT), 2021
With Moore's Law moving to the limit and the wave of miniaturization, intelligence and multi-functional development of electronic products is launched, expanding the packaging dimension of chips from two-dimensional to three-dimensional is recognized by the microelectronics industry as an effective way to shorten the interconnection length and an ideal
Zhang Peng, Chengyu Yu, Kai Cen, Jie Pu, Pengcheng Xia, Chengqian Wang   +5 more
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Transmittance of air/SiO/SUB 2//polysilicon/SiO/SUB 2//Si structures

IEEE Journal of Solid-State Circuits, 1975
Polycrystalline silicon films are presently used as the semitransparent gate electrodes in front-illuminated charge-coupled device (CCD) and charge-injection device (CID) image sensors. The transmittance of air/SiO/SUB 2//polysilicon/SiO/SUB 2//Si structures is calculated in spectral region between 0.4 and 1.0 /spl mu/.
C. Anagnostopoulos, G. Sadasiv
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Nanofabricated SiO₂-Si-SiO₂ Resonant Tunneling Diodes

MRS Proceedings, 2000
ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs.
J. G. Fleming, E. Chow, S.-Y. Lin
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Investigation of Ge nanocrystal formation in SiO 2 -Ge-SiO 2 sandwich structure

Scripta Materialia, 2001
10.1016/S1359-6462(01)00733-3 ; Scripta Materialia ; 44 ; 8-9 ; 1873-1877 ...
Choi, W.K., Ng, V., Swee, V.S.L., Ong, C.S., Yu, M.B., Rusli, Yoon, S.F.   +6 more
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Optical transitions from SiO/sub 2//crystalline Si/SiO/sub 2/ quantum wells

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), 2004
Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO/sub 2/ ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickness dependent luminescence in SiO/sub 2//Si/SiO/sub 2/
E.C. Cho, P. Reece, M.A. Green, R. Corkish, M. Gal   +4 more
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