Results 251 to 260 of about 274,489 (274)

Untersuchung des Schnittes CaO · SiO₂–MnO · SiO₂ im ternären System SiO₂–CaO–MnO

Zeitschrift für anorganische und allgemeine Chemie, 1935
AbstractEs werden mehrere Apparaturen zum Schmelzen und Abschrecken im Vakuum und Hochvakuum entwickelt, mit denen zum erstenmal die Synthese von reinem MnO·SiO2 gelingt. Ferner wird ein neuartiger Regler für Widerstandsöfen entwickelt, der es ermöglicht, jede Temperatur auf + 0,17° genau einzuhalten.
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Phase separation of thin SiO layers in amorphous SiO/SiO₂superlattices during annealing

Journal of Physics: Condensed Matter, 2003
The preparation of ordered and arranged Si quantum dots using a SiO/SiO 2 superlattice approach is presented. The different processes of phase separation and crystallization are studied in detail by infrared (IR) absorption and photoluminescence (PL) spectroscopy for different annealing temperatures from 300 to 1100°C.
Yi, Lixin, Heitmann, Johannes, Scholz, Roland, Zacharias, Margit   +3 more
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SiO Vapor Pressure in an SiO₂ Glass/Si Melt/SiO Gas Equilibrium System

Japanese Journal of Applied Physics, 1999
SiO vapor pressure concerning Czochralski (CZ) Si crystal growth has been measured successfully by an SiO2 glass/Si melt/SiO gas equilibrium system. A Si sample was sealed in a silica ampoule after being evacuated, and the ampoule was heated to a certain temperature ranging from 1450°C to 1540°C in an Ar atmosphere.
Xinming Huang, Kazutaka Terashima, Keigo Hoshikawa   +2 more
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High-voltage planar structure using SiO₂-SIPOS-SiO₂film

IEEE Electron Device Letters, 1985
The BV CB0 leakage current h FE were studied for high-voltage planar transistors which had three kinds of passivation films; SiO 2 -semi-insulating polycrystalline silicon (SIPOS)-SiO 2 ; SIPOS-SiO 2 ; and SiO 2 -phosphosilicate glass (PSG)-SiO 2 . The SiO 2 -SIPOS-SiO 2 type had a lower leakage current (surface generation current) and higher h FE than
A. Mimura, M. Oohayashi, S. Murakami, N. Momma   +3 more
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Preparation and luminescence properties of core–shell structure composites SiO₂@ANA-Si–Eu and SiO₂@ANA-Si–Eu–L and core–shell–shell structure composites SiO₂@ANA-Si–Eu@SiO₂ and SiO₂@ANA-Si–Eu–L@SiO₂

New Journal of Chemistry, 2020
Preparation and properties of core–shell and core–shell–shell structure composites with good luminescence properties.
Yan Qiao, Yilian Li, Wenxian Li, Jinrong Bao, Yushan Zheng, Lina Feng, Yangyang Ma, Kuisuo Yang, Anping Wu, He Bai, Yunjiang Yang   +10 more
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Anomalous bonding in SiO₂ at the SiO₂–Si interface

Philosophical Magazine B, 1987
Abstract Ultraviolet photoelectron spectroscopy valence-band spectra measured at 51 eV for a series of thin oxide layers thermally grown on Si(111) and Si(100) surfaces show that anomalous bonding configurations exist in SiO2 near the interface. A comparison with theoretical density-of-states calculations indicate that these configurations cannot be ...
G. Hollinger, E. Bergignat, H. Chermette, F. Himpsel, D. Lohez, M. Lannoo, M. Bensoussan   +6 more
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Detonation Consolidation of NiFe/SiO₂ and Co/SiO₂ nanocomposites

MRS Proceedings, 2002
ABSTRACTConsolidation of nanostructure magnetic particles is required not only for manufacturing bulk component, it is actually a fundamental requirement for obtaining novel magnetic properties from the material. Consolidation (assembly) of nanoparticles to full density without deteriorating their nanostructure (size and morphology) is a big challenge.
Xinqing Ma, Y. D. Zhang, S. Hui, Mingzhong Wu, Shihui Ge, W. A. Hines, J. I. Budnick, B. M. Cetegen, S. Y. Semenov   +8 more
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Formation of Ni/SiO₂ and Ag/SiO₂ Nanosphere Composites

MRS Proceedings, 2001
AbstractSiO2 nanospheres have been produced via a high temperature evaporation process and they have been Ni or Ag plated using electroless plating solutions. These samples were examined by Atomic Force Microscopy (AFM) and Magnetic Resonance (MR). The initial SiO2 nanospheres were about 30 nm in diameter, and the Ni plating layer resulted in a 25nm ...
S. M. Prokes, W. E. Carlos, Lenward Seals, Stephen Lewis, James L. Gole   +4 more
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Examination of the Si(111)-SiO[sub 2], Si(110)-SiO[sub 2], and Si(100)-SiO[sub 2] Interfacial Properties Following Rapid Thermal Annealing

Journal of The Electrochemical Society, 2002
The purpose of this article is to report the results of an experiment designed to investigate the density of interface states (DOS) measured at the Si-SiO 2 interface immediately following rapid thermal annealing (RTA) (1040°C) in a nitrogen (N 2 ) ambient. This work extends previous publications on Si(100) by examining (111), (110), and (100) silicon
P. K. Hurley, B. J. O’Sullivan, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven, J. H. Das   +5 more
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Radiation induced defects in SiO 2

Radiation Effects and Defects in Solids, 2002
The main luminescent centers in SiO 2 films are the red luminescence R (650 v nm; 1.85 v eV) of the non-bridging oxygen hole center (NBOHC) and the twofold-coordinated (divalent) silicon with a blue B (460 v nm; 2.7 v eV) and a UV band (285 v nm; 4.4 v eV).
H.-J. Fitting, A. N. Trukhin, T. Barfels, B. Schmidt, A. VON Czarnowski   +4 more
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