Results 131 to 140 of about 543,838 (250)

Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates

open access: yesResults in Physics, 2019
A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei   +8 more
doaj  

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

open access: yesIEEE Electron Device Letters, 2017
Xiangdong Li   +7 more
semanticscholar   +1 more source

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