Results 221 to 230 of about 543,838 (250)

An efficient and compact mid-infrared polarization splitter and rotator based on a bifurcated tapered-bent waveguide. [PDF]

Sci Rep
Zafar H, Pereira MF.
europepmc   +1 more source

An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures. [PDF]

Nano Lett
Han Y, Sun J, Richstein B, Grenmyr A, Bae JH, Allibert F, Radu I, Grützmacher D, Knoch J, Zhao QT.   +9 more
europepmc   +1 more source

Frequency, financial impact, and factors associated with cost outliers in intensive care units: a cohort study in Belgium. [PDF]

Crit Care Sci
Bruyneel A, den Bulcke JV, Leclercq P, Pirson M.   +3 more
europepmc   +1 more source

Individual Choices of Wintering Areas Drive Adult Survival Heterogeneity in a Long-Lived Seabird. [PDF]

Ecol Evol
Genovart M, Ramos R, Igual JM, Sanz-Aguilar A, Tavecchia G, Rotger A, Militão T, Vicente-Sastre D, Garcia-Urdangarin B, Pradel R, González-Solís J, Oro D.   +11 more
europepmc   +1 more source

Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter. [PDF]

Micromachines (Basel)
Wang B, Tang Z, Song Y, Liu L, Yang W, Wu L.   +5 more
europepmc   +1 more source

A Pathway for the Integration of Novel Ferroelectric Thin Films on Non-Planar Photonic Integrated Circuits. [PDF]

Micromachines (Basel)
Lievens E, De Geest K, Picavet E, Van Landschoot L, Vrielinck H, Feutmba GF, Rijckaert H, De Buysser K, Van Thourhout D, Bienstman P, Beeckman J.   +10 more
europepmc   +1 more source

A Mode-Localized Micro-Electromechanical System Accelerometer with Force Rebalance Closed-Loop Control. [PDF]

Micromachines (Basel)
Wang B, Qi Z, Wang K, Zhai Z, Wang Z, Zou X.   +5 more
europepmc   +1 more source

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Improvement in analog/RF performances of SOI TFET using dielectric pocket

, 2020
In this manuscript, the impact of dielectric pocket on analog/radio-frequency (RF) performances of SOI-TFET is investigated. The inclusion of a dielectric pocket to SOI-TFET has been found to have great potential in eliminating the ambipolarity when ...
C. Pandey, D. Dash, S. Chaudhury
semanticscholar   +1 more source

High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization

2014 IEEE International Electron Devices Meeting, 2014
We present a fully integrated 14nm CMOS technology featuring finFET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs.
C. Lin, B. Greene, S. Narasimha, J. Cai, A. Bryant, C. Radens, V. Narayanan, B. Linder, H. Ho, A. Aiyar, E. Alptekin, J. An, M. Aquilino, R. Bao, V. Basker, N. Breil, M. Brodsky, W. Chang, L. Clevenger, D. Chidambarrao, C. Christiansen, D. Conklin, C. Dewan, H. Dong, L. Economikos, B. Engel, S. Fang, D. Ferrer, A. Friedman, A. Gabor, F. Guarín, X. Guan, M. Hasanuzzaman, J. Hong, D. Hoyos, B. Jagannathan, S. Jain, S. Jeng, J. Johnson, B. Kannan, Y. Ke, B. Khan, B. Kim, S. Koswatta, A. Kumar, T. Kwon, U. Kwon, L. Lanzerotti, H.K. Lee, W. Lee, A. Lévesque, W. Li, Z. Li, W. Liu, S. Mahajan, K. McStay, H. Nayfeh, W. Nicoll, G. Northrop, A. Ogino, C. Pei, S. Polvino, R. Ramachandran, Z. Ren, R. Robison, I. Saraf, V. Sardesai, S. Saudari, D. Schepis, C. Sheraw, S. Siddiqui, L. Song, K. Stein, C. Tran, H. Utomo, R. Vega, G. Wang, H. Wang, W. Wang, X. Wang, D. Wehelle-Gamage, E. Woodard, Y. Xu, Y. Yang, N. Zhan, K. Zhao, C. Zhu, K. Boyd, E. Engbrecht, K. Henson, E. Kaste, S. Krishnan, E. Maciejewski, H. Shang, N. Zamdmer, R. Divakaruni, J. Rice, S. Stiffler, P. Agnello   +98 more
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Scaling the Si MOSFET: from bulk to SOI to bulk

, 1992
Scaling the Si MOSFET is reconsidered. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the deep-submicrometer regime, leading to an undesirably large junction capacitance ...
Ran-Hong Yan, A. Ourmazd, Kwing F. Lee
semanticscholar   +1 more source