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Short-channel effect in fully depleted SOI MOSFETs
, 1989The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results.
K. K. Young
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SOI LDMOSFET with Up and Down Extended Stepped Drift Region
Journal of Electronic Materials, 2017Mehdi Saremi+4 more
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Fully depleted SOI (FDSOI) technology
Science China Information Sciences, 2016K. Cheng, Ali Khaki-Firooz
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A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 2017B. K. Esfeh+3 more
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Improvements in SOI technology for RF switches
2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2015M. Jaffe+11 more
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Investigation of short channel effects in Bulk MOSFET and SOI FinFET at 20nm node technology
IEEE India Conference, 2015A. Gill, C. Madhu, Pardeep Kaur
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Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS
IEEE Journal of Solid-State Circuits, 2014A. Agah+4 more
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UTBB FD-SOI: A process/design symbiosis for breakthrough energy-efficiency
Design, Automation and Test in Europe, 2013P. Magarshack, P. Flatresse, G. Cesana
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