Results 71 to 80 of about 498,276 (232)
Tổng hợp sợi nano carbon/ZnO bằng kỹ thuật quay điện hóa
Tạp chí Khoa học Đại học Cần Thơ, 2020 Nghiên cứu này nhằm tổng hợp nano ZnO trên nền sợi carbon từ tiền thân sợi nano PVP/Zn(NO3)2 bằng phương pháp quay điện hóa. Các yếu tố ảnh hưởng đến quá trình tạo sợi nano PVP/Zn(NO3)2 bằng electrospinning đã được khảo sát: nồng độ polyvinyl ...
Văn Phạm Đan Thủy +3 more
doaj +1 more source
Études, 2015 Une écrasante majorité de Français souhaite finir sa vie à domicile plutôt qu’à l’hôpital. Cela invite à s’interroger sur le « chez soi ». Comment demeurer soi-même quand surgit l’épreuve de la dépendance ? Comment articuler vulnérabilité et autonomie, sinon dans une dynamique relationnelle sensible aux capacités (ou aux « capabilités ») de la personne
openaire +2 more sources
InterCarto. InterGIS, 2017 The authors have developed a methodology of implementing of geoinformation technologies to assess the ecological situation in the waters of the eastern part of the Finnish Gulf and the Neva Bay, which is being formed under the influence of a complex ...
A. R. Alyautdinov +4 more
doaj +1 more source
, 2013 We study the effects of the spin orbit interaction (SOI) of light in an optical trap and show that the propagation of the tightly focused trapping beam in a stratified medium can lead to significantly enhanced SOI. For a plane polarized incident beam the
Ayan Banerjee +6 more
core +1 more source
, 2004 Transport properties of a two-dimensional electron gas (2DEG) are studied in the presence of a perpendicular magnetic field $B$, of a {\it weak} one-dimensional (1D) periodic potential modulation, and of the spin-orbit interaction (SOI) described only by
E. I. Rashba +6 more
core +1 more source
Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates
Results in Physics, 2019 A novel trench SOI LDMOS with centrosymmetric double vertical field plates structure (CDVFPT SOI LDMOS) is proposed in this paper. The 2-D device simulator MEDICI is used to investigate the characteristics of the proposed structure.
Jianmei Lei +8 more
doaj +1 more source
The advancement of silicon-on-insulator (SOI) devices and their basic properties
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020 Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal ...
T.E. Rudenko, A.N. Nazarov, V.S. Lysenko
doaj +1 more source
Ultrafast all-optical wavelength conversion in silicon-insulator waveguides by means of cross phase modulation using 300 femtosecond pulses [PDF]
, 2006 In this paper we report the ultrafast all-optical wavelength conversion in Silicon-on-Insulator (SOI) waveguides. We used a pump-probe setup with 300 femtosecond pulses to demonstrate large temporal phase-shifts, caused by the Kerr effect and free ...
Dekker, R. +3 more
core +1 more source
Monolithic Pixel Sensors in Deep-Submicron SOI Technology
, 2009 Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS ...
+11 more
core +1 more source
, 2008 A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet ...
Arnaud Bournel +5 more
core +1 more source