Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides [PDF]
Phys. Rev. B 99, 245402 (2019), 2018 We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of ...
arxiv +1 more source
Performance of ultra-thin SOI-based resonators for sensing applications.
Optics Express, 2014 This work presents simulation and experimental results of ultra-thin optical ring resonators, having larger Evanescent Field (EF) penetration depths, and therefore larger sensitivities, as compared to conventional Silicon-on-Insulator (SOI)-based ...
S. T. Fard +11 more
semanticscholar +1 more source
Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared.
Optics Express, 2014 Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase shift.
A. Malik +10 more
semanticscholar +1 more source
Spin-current quantization in a quantum point contact with spin-orbit interaction
, 2010 We develop a realistic and analytically tractable model to describe the spin current which arises in a quantum point contact (QPC) with spin-orbit interaction (SOI) upon a small voltage is applied. In the model, the QPC is considered as a saddle point of
Sablikov, Vladimir A.
core +1 more source
Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator [PDF]
, 1996 Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells were grown on bonded silicon-on-insulator (SOI) substrates. Comparison with similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low ...
Arnone, D. D. +6 more
core +1 more source
REPRESENTATIONS DU MAL DANS LES CONTES MERVEILLEUX [PDF]
Studii si Cercetari Filologice: Seria Limbi Romanice, 2018 Notre travail se propose d’analyser la dynamique des relations interactantielles et des transformations ontiques dans les contes de fées, tout en insistant sur la spécificité de la manifestation du Mal.
Daniela MIREA
doaj
Fermionic and Majorana Bound States in Hybrid Nanowires with Non-Uniform Spin-Orbit Interaction
, 2014 We study intragap bound states in the topological phase of a Rashba nanowire in the presence of a magnetic field and with non-uniform spin orbit interaction (SOI) and proximity-induced superconductivity gap.
Klinovaja, Jelena, Loss, Daniel
core +1 more source
A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology [PDF]
, 2009 The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a ...
Annema, A.J. +3 more
core +2 more sources
Advanced FD-SOI and Beyond Low Temperature SmartCut™ Enables High Density 3-D SoC Applications
IEEE Journal of the Electron Devices Society, 2019 Beyond 65FD-SOI, 28FD-SOI, and 22FD-SOI production granted technologies, SmartCut™ development supports both advanced FD-SOI and low temperature SOI roadmaps.
W. Schwarzenbach +10 more
doaj +1 more source
Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides [PDF]
Phys. Rev. X 6, 041020 (2016), 2016 We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates ...
arxiv +1 more source