Results 181 to 190 of about 309,851 (311)

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

open access: yesAdvanced Materials Interfaces, EarlyView.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan   +3 more
wiley   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Morphology‐Controlled Silica Nanoparticle Coatings for Transparent Radiative Cooling

open access: yesAdvanced Materials Interfaces, EarlyView.
Transparent radiative cooling coatings are achieved by immobilizing solid and hollow silica spheres on glass. Particle morphology within sub‐monolayer coatings is shown to govern the trade‐off between visible and atmospheric window reflectance. Hollow‐sphere structures enable reduced thermal emission losses while preserving transparency, highlighting ...
Jefferson A. S. Lam   +8 more
wiley   +1 more source

Experimental performance comparison of fixed and single-axis subfields in a large-scale outdoor photovoltaic power plant. [PDF]

open access: yesSci Rep
Abderraouf B   +7 more
europepmc   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

Tailoring the Morphology of MoS2 using RF Magnetron Sputtering for Enhanced Photoelectrochemical Water Splitting

open access: yesAdvanced Materials Interfaces, EarlyView.
Tailoring the morphology of MoS2 using RF Magnetron Sputtering for Enhanced Photoelectrochemical Water Splitting. ABSTRACT 2D molybdenum disulfide (MoS2) is a promising material for optoelectronic and photoelectrochemical (PEC) applications due to its unique properties.
Somnath Ladhane   +9 more
wiley   +1 more source

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