Results 231 to 240 of about 546,735 (346)

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Black Silicon Layer Formation using Radio-Frequency Multi-Hollow Cathode Plasma System and Its Application in Solar Cell [PDF]

open access: bronze, 2003
Utpal Gangopadhyay   +5 more
openalex   +1 more source

A Comprehensive Review of Waste‐Derived Materials for Solar Still Performance Enhancement

open access: yesAdvanced Materials Interfaces, EarlyView.
Solar desalination reduces energy use and produces freshwater sustainably, but its productivity is limited and cannot meet rising demand. Thus, solar desalination system improvements are sought to boost water productivity. Waste materials are abundantly available and burden the environment, making them low‐cost enhancers for solar desalination systems.
A. S. Abdullah   +6 more
wiley   +1 more source

Electrochemically Engineered PEDOT:PSS/MXene Composite Electrode for the Label‐Free Procalcitonin Detection

open access: yesAdvanced Materials Interfaces, EarlyView.
Procalcitonin is a key biomarker for bacterial infections, but conventional detection methods are often time‐consuming. Here, we present an electrochemical sensor based on highly conductive Ti3C2Tx MXene combined with PEDOT:PSS, enabling direct antibody immobilization, while a bovine serum albumin coating provides antifouling protection.
Angelika Banaś   +6 more
wiley   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

Home - About - Disclaimer - Privacy