Results 1 to 10 of about 19,360,112 (295)

The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

open access: yesPhotonics, 2021
We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE)
Jie Zhao   +5 more
doaj   +1 more source

Two-Dimensional Transient Temperature Distribution Measurement of GaN Light-Emitting Diode Using High Speed Camera

open access: yesIEEE Journal of the Electron Devices Society, 2021
We put forward a non-contact method for determining the transient two-dimensional (2D) temperature distribution of light emitting diodes (LEDs).
Guangheng Xiao   +8 more
doaj   +1 more source

Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions

open access: yesPhotonics, 2021
Versatile applications call for InGaN-based light-emitting diodes (LEDs) to operate at ultra-high current densities with high quantum efficiency. In this work, we investigated the size-dependent effects of the electrical and optical performance of LEDs ...
Xingfei Zhang   +8 more
doaj   +1 more source

Wafer-Scale Semipolar Micro-Pyramid Lighting-Emitting Diode Array

open access: yesCrystals, 2021
InGaN-based micro-structured light-emitting diodes (µLEDs) play a critical role in the field of full-color display. In this work, selected area growth (SAG) of a micro-pyramid LED array was performed on a 2-inch wafer-scale patterned SiO2 template ...
Shuo Zhang   +10 more
doaj   +1 more source

Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates

open access: yesIEEE Photonics Journal, 2014
In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates.
Tongbo Wei   +11 more
doaj   +1 more source

High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate

open access: yesNanomaterials, 2022
Constant advance in improving the luminous efficacy (ηL) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy.
Shuo Zhang   +12 more
doaj   +1 more source

A Transmission-Type Testing System for Measuring Optical Characteristics of Phosphors for Remote-Phosphor-Based White LEDs

open access: yesIEEE Photonics Journal, 2016
In this paper, we have proposed a transmission-type testing system for determining optical characteristics of remote-phosphor plates in white light-emitting diodes (WLEDs).
Sijia Dang   +9 more
doaj   +1 more source

Prediction of Lumen Depreciation and Color Shift for Phosphor-Converted White Light-Emitting Diodes Based on A Spectral Power Distribution Analysis Method

open access: yesIEEE Access, 2017
The spectral power distribution (SPD) is considered as the figureprint of a light emitting diode (LED). Based on the analysis on its SPD, a method to predict both lumen depreciation and color shift for the phosphor converted white LEDs (pc-LEDs) is ...
Cheng Qian   +3 more
doaj   +1 more source

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