Results 141 to 150 of about 67,105 (263)

Ion-Electron Coupling-Driven Redox Behavior in Metal-Organic Frameworks. [PDF]

J Am Chem Soc
Avilés A, Ghotbi M, Ferguson AJ, Blackburn JL, Talin AA, Darensbourg MY, Balbuena PB.   +6 more
europepmc   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Imaging hole transport at catalyst-coated MIS photoanodes for water splitting under high-intensity illumination. [PDF]

Chem Sci
Klahan K, Goudeau B, Garrigue P, Lapeyre V, Santinacci L, Toma M, Pattanasattayavong P, Loget G.   +7 more
europepmc   +1 more source

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang, Camille E. Cunin, Rebecca F. Meacham, Sang Ouk Kim, Aristide Gumyusenge   +4 more
wiley   +1 more source

New organic-inorganic bromide (P(C₄H₉)₄)₂[ZnBr₄]: crystal structure, vibrational properties, and electrical conduction behavior from impedance studies. [PDF]

RSC Adv
Ezzedine M, Ben Gzaiel M, Tliha M, López-Lago E, Rekik W, Ben Ahmed A, Oueslati A.   +6 more
europepmc   +1 more source

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

Advanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher, Andrea Martini, Eduardo Ortega, Lichen Bai, Eric Liberra, Daniel Escalera‐López, Hyo Sang Jeon, Antonia Herzog, Clara Rettenmaier, Dorottya Hursán, David Koshy, Mariana Cecilio de Oliveira Monteiro, Timon Wagner, Leon Jacobse, Felix Haase, Arno Bergmann, Janis Timoshenko, Beatriz Roldan Cuenya   +17 more
wiley   +1 more source

Systems modeling of a phenazine-producing Escherichia coli bio-battery anolyte. [PDF]

PLoS One
King SM, King MR.
europepmc   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Thermal Utilization on Chip. [PDF]

Light Sci Appl
Zhang Y, Lai B, Yu F, Li X, Yang Y, Lü W, Jiang K, Sun X, Li D.   +8 more
europepmc   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

Advanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim, Jong Bin An, Seok Gyu Hong, Moon Ho Lee, Ju Hyun Lee, Ji Yeong Park, Hwa Seon Kim, I. Sak Lee, Kyungmoon Kwak, Hyun Jae Kim   +9 more
wiley   +1 more source