Results 181 to 190 of about 72,143 (301)

De-coherent parallel laser processing of ultradense nanopores for high-density, large-area 3D optical phase encoding. [PDF]

Nat Commun
Jiang Z, Hu J, Zhong L, Zhu Y, Zhang J, Zhao W, Qiu J.   +6 more
europepmc   +1 more source

Understanding the Interplay Between Thermal Activation, Diffusion, and Phase Segregation of Molecular Dopants Blended with Polymeric Semiconductors

Advanced Electronic Materials, EarlyView.
The use of air stable but thermally labile molecules provides an efficient strategy for the N‐type doping of organic semiconductors with relatively low electron affinities. Design criteria for efficient dopants should also take into account diffusion and phase segregation that cannot be decoupled from thermally activated doping.
Francesca Pallini, Sara Mattiello, Mauro Sassi, Gabriele Paoli, Giuseppe Mattioli, Pietro Rossi, Giulia Coco, Alberto D. Scaccabarozzi, Brian Minki Kim, Pietro Mariani, Hiba Wakidi, Sadie M. Flagg, Massimiliano D'Arienzo, Mario Caironi, Thuc‐Quyen Nguyen, Luca Beverina   +15 more
wiley   +1 more source

High-Resolution Low-Sidelobe Waveform Design Based on HFPFM Coding Model for SAR. [PDF]

Sensors (Basel)
Gao Y, Jin G, Zhang X, Zhu D.
europepmc   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Realization of a Pre-Sample Photonic-Based Free-Electron Modulator in Ultrafast Transmission Electron Microscopes. [PDF]

ACS Photonics
Ferrari BM, Duncan CJR, Yannai M, Dahan R, Rosi P, Ostroman I, Bravi MG, Niedermayr A, Abudi TL, Adiv Y, Fishman T, Park ST, Masiel D, Lagrange T, Carbone F, Grillo V, García de Abajo FJ, Kaminer I, Vanacore GM.   +18 more
europepmc   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

RNN based SVPWM controlled grid integrated PV system with COA based MPPT for enhanced power quality and dynamic tracking. [PDF]

Sci Rep
Manjula A, Babu AR.
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Pulse width modulation for current source inverters with arbitrary number of phases. [PDF]

Sci Rep
Pejović P, Ohno T, Borović U, Mirić S.   +3 more
europepmc   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source