Results 161 to 170 of about 25,759 (265)

Supporting AI Readiness Through Digital Workflows in Materials Science

open access: yesAdvanced Engineering Materials, EarlyView.
Digitalization drives innovation in materials science by connecting data silos and turning heterogeneous processes into reusable research pipelines. Across 13 MaterialDigital projects, digital workflows reveal complementary pathways toward AI‐ready materials research, founded on structured data, persistent artifacts, executable orchestration, and ...
Marian Bruns   +67 more
wiley   +1 more source

3D‐Printed Titanium Gyroid Scaffold Structure Integrated With Tough Hybrid Materials for Cartilage Replacement

open access: yesAdvanced Engineering Materials, EarlyView.
This study proposes a potential device design for joint cartilage replacement. Silica‐polytetrahydrofuran (SiO2‐PolyTHF) hybrids with customizable mechanical properties were developed to mimic the characteristics of a natural meniscus. These were synthesized through a two‐pot sol–gel hybrid process.
Yu‐Chien Lin   +12 more
wiley   +1 more source

MuSpAn: a toolbox for multiscale spatial analysis. [PDF]

open access: yesNat Commun
Bull JA   +7 more
europepmc   +1 more source

Microstructure‑Dependent Phase Transformations Under High‑Pressure Laser Heating in Additively Manufactured AlCrFe2Ni2

open access: yesAdvanced Engineering Materials, EarlyView.
Additively manufactured AlCrFe2Ni2 with contrasting BCC/B2‐dominant and lamellar FCC + BCC/B2 microstructures exhibits the same pressure‐induced BCC/B2 → HCP transformation. Under laser heating at high pressure, HCP is destabilized, and a cubic BCC/B2 + FCC assemblage is recovered, while the lower‐scan‐speed microstructure transforms at a lower ...
Raimundas Sereika   +5 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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