A continuous speech recognition approach for the design of a dictation machine
Kamel Smaı̈li +3 more
openalex +2 more sources
Understanding Functional Materials at School
This review outlines strategies for effectively teaching nanoscience in schools, focusing on challenges such as scale comprehension and curriculum integration. Emphasizing inquiry‐based learning and chemistry core concepts, it showcases hands‐on activities, digital tools, and interdisciplinary approaches.
Johannes Claußnitzer, Jürgen Paul
wiley +1 more source
Reduced Visual-Cortex Reorganization Before and After Cochlear Implantation Relates to Better Speech Recognition Ability. [PDF]
Weglage A +7 more
europepmc +1 more source
Magnetic‐Field Tuning of the Spin Dynamics in the Quasi‐2D Van der Waals Antiferromagnet CuCrP2S6
This study reveals 2D character of the spin dynamics in CuCrP2S6, as well as complex field dependence of collective excitations in the antiferromagnetically ordered state. Their remarkable tuning from the antiferromagnetic to the ferromagnetic type with magnetic field, together with the non‐degeneracy of the magnon gaps favorable for the induction of ...
Joyal John Abraham +16 more
wiley +1 more source
Advancing automatic speech recognition for low-resource ghanaian languages: Audio datasets for Akan, Ewe, Dagbani, Dagaare, and Ikposo. [PDF]
Wiafe I +7 more
europepmc +1 more source
Pitch dependent phone modelling for HMM based speech recognition
H. Singer, Shigeki Sagayama
openalex +2 more sources
Enthesis injuries are a worldwide healthcare problem. Biomimetic electrospun enthesis fascicle‐inspired scaffolds, with and without nano‐mineralization are developed. Human Mesenchymal Stromal cells (hMSCs) express the most balanced enthesis markers on the non‐mineralized scaffolds.
Alberto Sensini +11 more
wiley +1 more source
Automatic speech recognition predicts contemporaneous earthquake fault displacement. [PDF]
Johnson CW, Wang K, Johnson PA.
europepmc +1 more source
The effects of descriptive forms of speech act in stories on recognition memory.
Toshiaki Muramoto
openalex +2 more sources
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source

