Results 261 to 270 of about 76,325 (312)

Ethical and Frugal Approaches to Animal Experimentation in Bioelectronics and Neural Engineering—An Invertebrate Renaissance?

open access: yesAdvanced Electronic Materials, EarlyView.
Invertebrates are the classic neuroscience models and should make a comeback. Invertebrate organisms can be a more ethical and cost‐effective way to move bioelectronics research forward more rapidly. ABSTRACT The accelerating development of bioelectronic neural interfaces has brought increased attention to ethical considerations surrounding in vivo ...
Eric Daniel Głowacki
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Design of CMOS-memristor hybrid synapse and its application for noise-tolerant memristive spiking neural network. [PDF]

open access: yesFront Neurosci
Lim JG   +14 more
europepmc   +1 more source

Gel‐Amin for Improving Extracellular Recordings of Cardiomyocytes in a 3D Microphysiological System

open access: yesAdvanced Electronic Materials, EarlyView.
This work combines a conductive collagen‐based hydrogel with a laser‐cut and assembly technique to fabricate microphysiological systems that improve extracellular recordings of cardiomyocytes in 3D on microelectrode arrays. The inclusion of choline acrylate into GelMA imparts a higher electrical conductivity and improves the signal‐to‐noise ratio of on‐
Dominic Pizzarella   +4 more
wiley   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu   +8 more
wiley   +1 more source

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