Results 261 to 270 of about 68,095 (317)
Signal-to-event encoding parameter selection for multiple event classification with spiking neural networks. [PDF]
Pabian M +4 more
europepmc +1 more source
Polychronization as a mechanism for language acquisition in spiking neural networks
Felix Y Wang
openalex +1 more source
An Efficient Supervised Training Algorithm for Multilayer Spiking Neural Networks
Xiurui Xie +4 more
openalex +2 more sources
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu +7 more
wiley +1 more source
Research on target detection for autonomous driving based on ECS-spiking neural networks. [PDF]
Jin M, Wang X, Guo C, Yang S.
europepmc +1 more source
Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren +8 more
wiley +1 more source
Encrypted Spiking Neural Networks Based on Adaptive Differential Privacy Mechanism. [PDF]
Luo X +5 more
europepmc +1 more source
A plasmonic optoelectronic memristor based on Te nanowires‐Au nanoparticles/ι‐carrageenan enables IR‐programmed and visiblelight‐erased non‐volatile conductance. The all‐photonic write/erase scheme supports in‐sensor logic and real‐time motion detection in darkness.
Jingyao Bian +7 more
wiley +1 more source
Brain-Inspired Architecture for Spiking Neural Networks. [PDF]
Tang F, Zhang J, Zhang C, Liu L.
europepmc +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source

