Results 151 to 160 of about 2,202 (211)

Efficient Current‐Driven Perpendicular Magnetization Switching Through the Synergy of the Orbital and Spin Hall Effects

Advanced Science, EarlyView.
NiNb alloys enable efficient charge‐to‐spin conversion by combining the spin Hall effect of nickel with the orbital Hall effect of niobium. Composition tuning yields spin‐torque efficiencies of −1.4 to −1.7 and a non‐monotonic efficiency‐resistivity relationship, revealing orbital‐spin synergy beyond conventional spin Hall materials and offering a ...
Chuangwen Wu, Jing Zhou, Yibo Fan, Jiali Chen, Rongce Sun, Zonghao Deng, Zengxin Wei, Chuantong Ren, Xingen Zheng, Zhaowei Zhang, Jing Zhang, Jingfeng Li, Jinkui Zhao, Wei Jiang, Haibo Ke, Hao Wu, Weihua Wang   +16 more
wiley   +1 more source

Harnessing orbital Hall effect in spin-orbit torque MRAM. [PDF]

Nat Commun
Gupta R, Bouard C, Kammerbauer F, Ledesma-Martin JO, Bose A, Kononenko I, Martin S, Usé P, Jakob G, Drouard M, Kläui M.   +10 more
europepmc   +1 more source

Latent Diffusion Process With Mechanistic Guidance For Designing Functionally Graded Metamaterials With Perfect Connectivity

Advanced Science, EarlyView.
A latent diffusion‐based framework is proposed for designing functionally graded metamaterials with perfect connectivity. By integrating vector‐quantized latent representations with mechanistic guidance, the framework enables accurate inverse design toward target elastic properties.
Jongbin Yu, Dosung Lee, Namjung Kim
wiley   +1 more source

Coexisting Non-Trivial Van der Waals Magnetic Orders Enable Field-Free Spin-Orbit Torque Magnetization Dynamics. [PDF]

Adv Mater
Zhao B, Bainsla L, Ershadrad S, Zeng L, Ngaloy R, Svedlindh P, Olsson E, Sanyal B, Dash SP.   +8 more
europepmc   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Controlling Magnetization in Ferromagnetic Semiconductors by Current-Induced Spin-Orbit Torque. [PDF]

Materials (Basel)
Lee S, Liu X, Furdyna J.
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Field-Free Spin-Orbit Torque Switching in Janus Chromium Dichalcogenides. [PDF]

Nano Lett
Vojáček L, Medina Dueñas J, Li J, Ibrahim F, Manchon A, Roche S, Chshiev M, García JH.   +7 more
europepmc   +1 more source

Thin‐Film Thermal Sensors on Chitosan Substrates for Sustainable Transient Electronics

Advanced Electronic Materials, EarlyView.
Fully transient thin‐film temperature sensors are realized on pure chitosan substrates using Mo‐based RTDs and a‐IGZO/Mo thermistors. The devices exhibit high sensitivity, mechanical flexibility, humidity‐aware operation, and complete dissolution in natural solvents.
Ahmed Rasheed, Soufiane Krik, Sundus Riaz, Hafiza Faiqa Maqsood, Jacopo Nicoletti, Riccardo Zamboni, Guglielmo Trentini, Pietro Ibba, Franco Cacialli, Andrea Gaiardo, Giuseppe Cantarella, Niko Münzenrieder, Paolo Lugli, Giovanni Antonio Salvatore, Luisa Petti   +14 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source