Results 11 to 20 of about 383,954 (251)

Harnessing orbital Hall effect in spin-orbit torque MRAM. [PDF]

Nat Commun
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching,
Gupta R, Bouard C, Kammerbauer F, Ledesma-Martin JO, Bose A, Kononenko I, Martin S, Usé P, Jakob G, Drouard M, Kläui M.   +10 more
europepmc   +3 more sources

Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature [PDF]

Science Advances, 2023
Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation.
Shivam N Kajale, Thanh Nguyen, N. T. Hung, Mingda Li, D. Sarkar   +4 more
semanticscholar   +1 more source

Switching of Perpendicular Magnetization by Spin–Orbit Torque [PDF]

Advances in Materials, 2023
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale.
Lijun Zhu
semanticscholar   +1 more source

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source

Advanced Electronic Materials, 2023
The utilization of novel noncollinear antiferromagnetic materials holds great promise for the development of energy‐efficient spintronic devices. However, only a few studies have reported on the all‐electrical control of perpendicular magnetization ...
Dequan Meng, Shiwei Chen, Chuantong Ren, Jiaxu Li, Guibin Lan, Chaozhong Li, Yong Liu, Yurong Su, Guoqiang Yu, Guozhi Chai, Rui Xiong, Weisheng Zhao, Guang Yang, Shiheng Liang   +13 more
doaj   +2 more sources

Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching [PDF]

Communications Physics, 2021
Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin-Hall-induced spin current.
Soogil Lee, Min-Gu Kang, D. Go, Dohyoung Kim, Junmo Kang, T. Lee, Geun-Hee Lee, Jaimin Kang, N. Lee, Y. Mokrousov, Sanghoon Kim, Kab-Jin Kim, Kyung-Jin Lee, Byong‐Guk Park   +13 more
semanticscholar   +1 more source

Spin-orbit torque switching of magnetic tunnel junctions for memory applications [PDF]

Journal of Magnetism and Magnetic Materials, 2022
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer torques (STT),
V. Krizakova, M. Perumkunnil, S. Couet, P. Gambardella, K. Garello   +4 more
semanticscholar   +1 more source

Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field‐Free Spin–Orbit‐Torque Switching [PDF]

Advances in Materials, 2023
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet ...
Thow Min Jerald Cham, Reiley Dorrian, Xiyue S. Zhang, Avalon H. Dismukes, Daniel G Chica, A. May, Xavier Roy, D. A. Muller, D. Ralph, Y. Luo   +9 more
semanticscholar   +1 more source

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient [PDF]

Nature Communications, 2021
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for ...
Zhenyi Zheng, Yue Zhang, V. Lopez-Dominguez, L. Sánchez-Tejerina, Jiacheng Shi, Xueqiang Feng, Lei Chen, Zilu Wang, Zhizhong Zhang, Kun Zhang, Bin Hong, Yong Xu, Youguang Zhang, M. Carpentieri, A. Fert, G. Finocchio, Weisheng Zhao, P. Khalili Amiri   +17 more
semanticscholar   +1 more source

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

Nature Communications, 2023
Two-dimensional (2D) ferromagnetic materials with unique magnetic properties have great potential for next-generation spintronic devices with high flexibility, easy controllability, and high heretointegrability. However, realizing magnetic switching with
Haiyuan Wang, Hao Wu, J. Zhang, Yingjie Liu, Dongdong Chen, C. Pandey, Jialiang Yin, D. Wei, N. Lei, Shuyuan Shi, Haichang Lu, Peng Li, A. Fert, Kang L. Wang, Tianxiao Nie, Weisheng Zhao   +15 more
semanticscholar   +1 more source

Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current [PDF]

Nano letters (Print), 2023
Current-induced spin–orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications.
V. Kateel, V. Krizakova, Siddharth Rao, K. Cai, M. Gupta, M. G. Monteiro, F. Yasin, Bart Sor'ee, J. De Boeck, S. Couet, P. Gambardella, G. Kar, K. Garello   +12 more
semanticscholar   +1 more source