Results 181 to 190 of about 145,803 (246)

Spin-Orbit-Coupling-Governed Optical Absorption in Bilayer MoS₂ via Strain, Twist, and Electric Field Engineering. [PDF]

Nanomaterials (Basel)
Yu L, Chen Y, Zhang W, Yang P, Feng X.
europepmc   +1 more source

Selenium‐Incorporated Polymerized Nonfullerene Acceptors/SWCNT Composites with Polymer‐Assisted n‐Doping for High‐Performance Organic Thermoelectrics

Advanced Functional Materials, EarlyView.
Selenium‐incorporated polymerized nonfullerene acceptor PCB2Se forms a strong supramolecular complex with SWCNTs, enabling a record‐high zT of 0.29. Sequential N‐DMBI doping, mediated through a polymer‐assisted electron‐transfer pathway, successfully converts the PCB2Se/SWCNT composite into an efficient n‐type material with an impressive power factor ...
Chi‐Chun Tseng, Che‐An Chou, Chi Chang, Li‐Lun Yeh, Chien‐Yi Ku, Jhih‐Min Lin, Shih‐Huang Tung, Cheng‐Liang Liu, Yen‐Ju Cheng   +8 more
wiley   +1 more source

Crystal tensor properties of magnetic materials with and without spin-orbit coupling. Application of spin point groups as approximate symmetries. [PDF]

Acta Crystallogr A Found Adv
Etxebarria J, Perez-Mato JM, Tasci ES, Elcoro L.   +3 more
europepmc   +1 more source

Unlocking Multi‐Valley Energy Pockets and Interface‐Induced Phonon Filtering in InSb Thermoelectrics by Reaction‐Driven Interface Engineering

Advanced Functional Materials, EarlyView.
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin, Xiao Yang, Xiao‐Lei Shi, Chengyun Xu, Xi Ling, Pengyu Zhang, Jinfeng Dong, Yong Du, Haisheng Chen, Ting Zhang, Zhi‐Gang Chen   +10 more
wiley   +1 more source

The Topological Phases of One-Dimensional Non-Hermitian Systems with Spin-Orbit Coupling of the Generalized Brillouin Zone. [PDF]

Materials (Basel)
Han Y, Liu J, Chong S, Du J, Meng L, Gao Y.   +5 more
europepmc   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source

In-Plane Gradient Magnetic Field-Induced Topological Defects in Rotating Spin-1 Bose-Einstein Condensates with SU(3) Spin-Orbit Coupling. [PDF]

Entropy (Basel)
Yang H, Li PY, Yu B.
europepmc   +1 more source

How the Carrier Mobility and Seebeck Coefficient of Doped Semiconducting Polymers Are Controlled by Counterion Interactions and Mesoscale Order

Advanced Functional Materials, EarlyView.
Conventional doping of P3HT with F4TCNQ results in poor charge transport. However, when F4TCNQ is exchanged with LiTFSI, the transport characteristics are greatly enhanced. We find the increase in charge transport is directly related to an increase in the mesoscale ordering of P3HT, resulting in longer and better‐connected transport pathways.
Quynh M. Duong, Diego Garcia Vidales, Xinyu Liu, Charlene Z. Salamat, Austin Ready, Hashim Al Khunaizi, Mei Matsumoto, Alexander M. Spokoyny, Sarah H. Tolbert, Benjamin J. Schwartz   +9 more
wiley   +1 more source

Controllable z-Polarized Spin Current in Artificially Structured Ferromagnetic Oxide with Strong Spin-Orbit Coupling. [PDF]

Nano Lett
Zheng D, Xu J, Wang Q, Liu C, Yang T, Chen A, Li Y, Tang M, Chen M, Algaidi H, Jin C, Liu K, Kläui M, Schwingenschlögl U, Zhang X.   +14 more
europepmc   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source