Photo-Patternable PEDOT:PSS for High Performance Organic Electrochemical Transistors. [PDF]
Coen CT +4 more
europepmc +1 more source
Ferroelectricity in Antiferromagnetic Wurtzite Nitrides
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa +3 more
wiley +1 more source
Bimodal Cholesterol for Correlative In-Cell DNP Solid-State NMR and Confocal Microscopy of the Plasma Membrane. [PDF]
Overall SA +5 more
europepmc +1 more source
Magnetic Force Microscopy Signatures of Higher‐Order Skyrmions and Antiskyrmions
Magnetic force microscopy operated under vacuum conditions enables the qualitative identification of higher‐order skyrmions and antiskyrmions in Co/Ni multilayers at room temperature. Distinct stray‐field contrast signatures arise from vertical Bloch lines and complex domain‐wall configurations.
Sabri Koraltan +8 more
wiley +1 more source
Rapid and High-Fidelity Fabrication of Embedded Elastomeric Photomask for Wafer-Scale Sub-Micrometer Conformal Contact Photolithography. [PDF]
Liang H, Lei B, Shu Z, Chen L, Duan H.
europepmc +1 more source
Domain Wall Rebounds Driven by Competing Entropic and Spin‐Transfer Torques in Cylindrical Nanowires
Domain‐wall motion in cylindrical magnetic nanowires driven by nanosecond current pulses. Low current densities efficiently displace domain walls, whereas higher currents cause rebound at the wire ends. The effect results from the interplay between spin‐transfer torque and thermally induced processes, highlighting the role of thermal gradients in ...
Elias Saugar +11 more
wiley +1 more source
Magnetic-lens-generated polarized neutron beam with enhanced intensity and <i>Q</i> resolution for small-angle neutron scattering. [PDF]
Hiroi K +4 more
europepmc +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Intermediate excited state relaxation dynamics of boron vacancy spin defects in hexagonal boron nitride. [PDF]
Konrad P +7 more
europepmc +1 more source
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source

