Results 41 to 50 of about 10,823,509 (247)

Spin-Hall effect in the scattering of structured light from plasmonic nanowire

, 2018
Spin-orbit interactions are subwavelength phenomena which can potentially lead to numerous device related applications in nanophotonics. Here, we report Spin-Hall effect in the forward scattering of Hermite-Gaussian and Gaussian beams from a plasmonic ...
Vijay Kumar (377076), G. V. Pavan Kumar (11106565), Deepak K. Sharma (1926904), Adarsh B. Vasista (5149328), Shailendra K. Chaubey (4708591)   +4 more
core   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Rashba spin-splitting driven inverse spin Hall effect in MnBi2Te4

Communications Physics
The inverse spin Hall effect is a critical method for detecting spin Hall conductivity. Unearthing the physical relationship between electronic structure and spin Hall conductivity is conducive to establishing an intrinsic link between microstructure and
Wen-Ti Guo, Zhigao Huang, Jian-Min Zhang
doaj   +1 more source

Spin–torque generator engineered by natural oxidation of Cu

Nature Communications, 2016
In thin film spintronic devices, heavy metals with strong spin-orbit coupling are required to achieve a sizeable spin Hall effect. Here, the authors demonstrate an enhancement of the spin Hall effect in Cu, a material with weak spin-orbit coupling, via ...
Hongyu An, Yuito Kageyama, Yusuke Kanno, Nagisa Enishi, Kazuya Ando   +4 more
doaj   +1 more source

Direct X-Ray Detection of the Spin Hall Effect in CuBi

Physical Review X, 2022
The spin Hall effect and the inverse spin Hall effect are important spin-charge conversion mechanisms. The direct spin Hall effect induces a surface spin accumulation from a transverse charge current due to spin-orbit coupling even in nonmagnetic ...
Sandra Ruiz-Gómez, Rubén Guerrero, Muhammad W. Khaliq, Claudia Fernández-González, Jordi Prat, Andrés Valera, Simone Finizio, Paolo Perna, Julio Camarero, Lucas Pérez, Lucía Aballe, Michael Foerster   +11 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Spin-injection Hall effect

, 2017
This chapter discusses the Spin-injection Hall effect (SiHE), another member of the spin-dependent Hall effects that is closely related to the anomalous Hall effect (AHE), the spin Hall effect (SHE), and the inverse spin Hall effect (iSHE).
K. Olejník, L. P. Zârbo, V. P. Amin, T. Jungwirth, J. Sinova, J. Wunderlich   +5 more
core   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Quantum spin Hall effect induced by electric field in silicene

, 2013
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to ...
Jian-Jun Liu, Shu-Shen Li, Li, Shu-Shen, Yan-Yang Zhang, Xing-Tao An, An, Xing-Tao, Liu, Jian-Jun, Zhang, Yan-Yang   +7 more
core   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source