Results 111 to 120 of about 120,424 (325)

Thermo‐Mechanically Recyclable Smart Textiles from Circularly Knitted Liquid Crystal Elastomer Fibers

open access: yesAdvanced Functional Materials, EarlyView.
Reprogrammable multi‐material smart textiles knitted from liquid crystal elastomer fibers undergo 2D and 3D deformation under thermal and photo stimuli. Circularly knitted tubular structures reversibly contract in radial and axial directions, enabling autonomous climbing, liquid release, and micro pumping.
Xue Wan   +8 more
wiley   +1 more source

Valley controlled spin-transfer torque in ferromagnetic graphene junctions

open access: yesNew Journal of Physics, 2018
The presence of the valley degree of freedom in graphene leads to the valleytronics, in which information is encoded by the valley quantum number of the electron.
Zhi Ping Niu
doaj   +1 more source

A New 3D Colon on a Chip to Decipher the Influence of Mechanical Forces on the Physiological Cellular Ecosystem

open access: yesAdvanced Healthcare Materials, EarlyView.
To dissect how mechanical forces influence intestinal physiology, we developed a stretchable 3D colon‐on‐chip that integrates tunable topography, stiffness and peristalsis‐like motion within a physiologically relevant microenvironment. We showed that stretching is a dominant factor governing epithelial behavior, markedly enhancing proliferation and ...
Moencopi Bernheim‐Dennery   +10 more
wiley   +1 more source

Spintronics and magnetic memory devices

open access: yesAdvances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi   +6 more
doaj   +1 more source

Unified theory of magnetization dynamics with relativistic and nonrelativistic spin torques

open access: yes, 2018
Spin torques play a crucial role in operative properties of modern spintronic devices. To study current-driven magnetization dynamics, spin-torque terms providing the action of spin-polarized currents have previously often been added in a ...
Berritta, Marco   +2 more
core   +1 more source

Resolving the Structural Duality of Graphene Grain Boundaries

open access: yesAdvanced Materials, EarlyView.
Cantilever ncAFM resolves the atomic structure of grain boundaries in graphene, revealing coexisting stable and metastable types. Both contain pentagon/heptagon defects, but metastable GBs show irregular geometries. Modeling shows metastable GBs form under compression, exhibiting vertical corrugation, while stable GBs are flat.
Haojie Guo   +11 more
wiley   +1 more source

Inequal Three Qubit Entanglement Using GHZ State Generation for Spin-Torque Based Qubit Architecture

open access: yesIEEE Open Journal of Nanotechnology
This article presents the generation of Greenberger–Horne–Zeilinger (GHZ) states using a spin-torque-based qubit architecture, introducing a hardware-native decomposition of the Hadamard and controlled NOT (CNOT) gates.
Anant Aravind Kulkarni, Shivam Verma
doaj   +1 more source

High write endurance up to 1012 cycles in a spin current-type magnetic memory array

open access: yesAIP Advances, 2019
We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array.
Yohei Shiokawa   +6 more
doaj   +1 more source

Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

open access: yes, 2005
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that
Buhrman, R. A.   +6 more
core   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

open access: yesAdvanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho   +9 more
wiley   +1 more source

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