Results 281 to 290 of about 120,424 (325)

Fully Nonvolatile and Low Power Full Adder Based on Spin Transfer Torque Magnetic Tunnel Junction With Spin-Hall Effect Assistance

IEEE transactions on magnetics, 2018
As technology node scales down below 90 nm, the conventional complementary metal oxide semiconductor (CMOS) logic circuits suffer from various problems such as high standby power due to increase in leakage current.
Abdolah Amirany, R. Rajaei
semanticscholar   +1 more source

Spintronic Oscillators Based on Spin-Transfer Torque and Spin-Orbit Torque

2015
Spin-torque nano-oscillators (STNOs) are a possible new type of integrated device for applications such as microwave emission, frequency modulation, frequency mixing, and frequency detection. In order to reach telecommunication-application-required specifications, several issues must be tackled such as operating without a magnetic field and obtaining ...
Mario Carpentieri, Giovanni Finocchio
openaire   +2 more sources

Amplification of Spin Waves by Thermal Spin-Transfer Torque

Physical Review Letters, 2011
We observe amplification of spin-wave packets propagating along a film of single-crystal yttrium iron garnet subject to a transverse temperature gradient. The spin waves are excited and detected with standard techniques used in magnetostatic microwave delay lines in the 1-2 GHz frequency range. The amplification is attributed to the action of a thermal
E, Padrón-Hernández, A, Azevedo, S M, Rezende   +2 more
openaire   +2 more sources

Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction

IEEE Transactions on Electron Devices, 2016
Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits.
You Wang, Hao Cai, Lirida Alves de Barros Naviner, Yue Zhang, Xiaoxuan Zhao, Erya Deng, Jacques-Olivier Klein, Weisheng Zhao   +7 more
semanticscholar   +1 more source

Spin-transfer torque switched magnetic tunnel junction for memory technologies

Journal of Magnetism and Magnetic Materials, 2022
Jonathan Z. Sun
semanticscholar   +1 more source

Topological skyrmion dynamics driven by spin-transfer torque

2015 IEEE Magnetics Conference (INTERMAG), 2015
Very recently, an important class of magnetic solitons called magnetic skyrmions has been widely studied [1,2]. The stability of these topological defects has been analyzed in the presence of intrinsic dissipation both as a function of Dzyaloshinskii-Moriya interaction (DMI) and as a function of a spin-polarized current (SPC).
CARPENTIERI, Mario, Tomasello, R., Finocchio, G., ZIVIERI, Roberto   +3 more
openaire   +2 more sources

Spin-transfer-torque-induced phenomena

Journal of Physics D: Applied Physics, 2011
This cluster, consisting of five invited articles on spin-transfer torque, offers the very first review covering both magnetization reversal and domain-wall displacement induced by a spin-polarized current. Since the first theoretical proposal on spin-transfer torque—reported by Berger and Slonczewski independently—spin-transfer torque has been ...
openaire   +1 more source

A survey of in-spin transfer torque MRAM computing

Science China Information Sciences, 2021
H. Cai, Bo Liu, Juntong Chen, L. Naviner, Yongliang Zhou, Zhen Wang, Jun Yang   +6 more
semanticscholar   +1 more source

Spin-Transfer Torque and Dynamics

2006
The currents in magnetic multilayers are spin polarized and can carry enough angular momentum that they can cause magnetic reversal and induce stable precession of the magnetization in thin magnetic layers. The flow of spins is determined by the spin-dependent transport properties, like conductivity, interface resistance, and spin-flip scattering in ...
Mark D. Stiles, Jacques Miltat
openaire   +1 more source

Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

Journal of Physics: Condensed Matter, 2007
We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgO-based magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1 ? 106?A?cm?2. The thermal effect and current
Zhitao Diao, Zhanjie Li, Shengyuang Wang, Yunfei Ding, Alex Panchula, Eugene Chen, Lien-Chang Wang, Yiming Huai   +7 more
openaire   +1 more source