Results 121 to 130 of about 26,599 (291)
APL MaterialsVoltage-controlled magnetic anisotropy (VCMA) has emerged as a potential solution to significantly reduce the power consumption of next-generation magnetic random-access memory (MRAM).
Zili Wang +12 more
doaj +1 more source
, 2016 This large reference work addresses a broad range of topics covering various aspects of spintronics science and technology, ranging from fundamental physics through materials properties and processing to established and emerging device technology and ...
Nitta, Junsaku +2 more
core +1 more source
Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics
Advanced Materials Technologies, EarlyView.Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto +9 more
wiley +1 more source
, 2019 Over three volumes and 2000 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications.
Nitta, Junsaku +2 more
core +1 more source
Advanced Optical Materials, EarlyView.Helicity‐dependent all‐optical magnetization switching was demonstrated for the Bi‐ and Ga‐substituted rare‐earth (R) iron garnet crystal thin films (Bi,Ga:RIG; R = Eu3+, Nd3+, and Y3+). The efficiency followed the order EIG > NIG > YIG. These results show the correlation between 4f orbital moment (4f〈L〉) of R3+ and helicity‐dependent optical ...
Ayumu Hata +7 more
wiley +1 more source
Goos–Hänchen shift of inelastically scattered spin-wave beams and cascade nonlinear magnon processes
Scientific ReportsWe study, using micromagnetic simulations, the inelastic scattering of spin-wave beams on edge-localized spin-wave modes in a thin ferromagnetic film.
Krzysztof Sobucki +3 more
doaj +1 more source
, 2014 The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition, cover the most recent research in areas of spin-current generation, spin-calorimetric effect, voltage effects on magnetic properties, spin-injection phenomena, giant ...
Shinjo, Teruya
core
Imaging and control of magnetization dynamics for spintronic devices [PDF]
, 2013 textAs features on integrated circuits continue to shrink, currently at 22 nm and predicted to approach 10 nm by 2020, the semiconductor industry is rapidly brushing up against the fundamental limits of electric charge and current based devices.
Birt, Daniel
core
Advanced Science, EarlyView.In this work, ultrafast laser‐induced spin transfer and spin relaxation dynamics in 2D van der Waals antiferromagnetic CrI3/CrGeTe3 heterostructures are investigated. Laser excitation is demonstrated to induce pronounced interlayer nonequilibrium spin dynamics and ultrafast magnetic moment reconstruction, driving a transition from an antiferromagnetic (
Yang Wu +5 more
wiley +1 more source
Nature CommunicationsTwo-dimensional ferromagnetic materials hold great promise for advancing low-power, high-integrated spintronic devices due to their atomic flat surfaces and versatile interfacial modulation.
Fan Gao +17 more
doaj +1 more source