Results 261 to 270 of about 85,154 (304)
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Van der Waals heterostructures for spintronics and opto-spintronics
Nature Nanotechnology, 2021The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate ...
Juan F Sierra +2 more
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Chemical Society Reviews, 2011 66 pages, 32 figures (To appear in Physica E as an invited review article)
Stefano Sanvito
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Non-collinear antiferromagnetic spintronics
Nature Reviews MaterialsBanabir Pal, Stuart Parkin
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The Journal of Physical Chemistry B, 2005
Thin ferromagnetic films can be lithographically patterned and incorporated into magnetoelectronic devices that have applications in digital electronics. Their bistable magnetization states are adaptive to application as memory cells in nonvolatile, magnetic random access memories (MRAM).
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Thin ferromagnetic films can be lithographically patterned and incorporated into magnetoelectronic devices that have applications in digital electronics. Their bistable magnetization states are adaptive to application as memory cells in nonvolatile, magnetic random access memories (MRAM).
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Topological spintronics and magnetoelectronics
Nature Materials, 2021Qing Lin He +2 more
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Two-dimensional spintronics for low-power electronics
Nature Electronics, 2019Xiaoyang Lin +2 more
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Spintronics and spintronics materials
Russian Chemical Bulletin, 2004The review concerns the fundamentals of spintronics (spin-transport electronics). The material covers spin-spin interactions and spin relaxation in semiconductors as well as spin and spin injection related effects in the condensed matter. Examples of promising spintronic devices are given, requirements for spintronic materials are formulated, methods ...
V. A. Ivanov +3 more
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ACM Journal on Emerging Technologies in Computing Systems, 2015
Conventional MOS integrated circuits and systems suffer serve power and scalability challenges as technology nodes scale into ultra-deep-micron technology nodes (e.g., below 40nm). Both static and dynamic power dissipations are increasing, caused mainly by the intrinsic leakage currents and large data traffic.
Wang Kang +8 more
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Conventional MOS integrated circuits and systems suffer serve power and scalability challenges as technology nodes scale into ultra-deep-micron technology nodes (e.g., below 40nm). Both static and dynamic power dissipations are increasing, caused mainly by the intrinsic leakage currents and large data traffic.
Wang Kang +8 more
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Spin‐Polarized Antiferromagnets for Spintronics
Advances in MaterialsSpin‐polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and 2D layer‐polarized AFMs, have emerged as transformative materials for next‐generation spintronic and optoelectronic technologies.
Zhenzhou Guo +5 more
semanticscholar +1 more source