Results 161 to 170 of about 57,476 (265)

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Modulation of Water Vapor Sorption by Pore Engineering in Isostructural Square Lattice Topology Coordination Networks. [PDF]

open access: yesACS Appl Mater Interfaces
Li X   +6 more
europepmc   +1 more source

Single-hole dynamics in thetJmodel on a square lattice [PDF]

open access: green, 2000
Michael Brunner   +2 more
openalex   +1 more source

Heterostructure‐Driven D‐Band of MoS2 Engineering Catalytic Polysulfide Conversion in Lithium–Sulfur Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Research on phase ratio‐dependent modulation of built‐in electric fields and d‐band centers in yolk–shell structured C@MoS2‐MoSe2 has determined that the C@3MoS2‐1MoSe2 configuration is optimal, which can achieve an optimal d‐band center position and enhance electrochemical performance.
Ruixian Duan   +11 more
wiley   +1 more source

Dinuclear Copper Sulfate-Based Square Lattice Topology Network with High Alkyne Selectivity. [PDF]

open access: yesCryst Growth Des
Andaloussi YH   +6 more
europepmc   +1 more source

Punctured polygons and polyominoes on the square lattice [PDF]

open access: green, 2000
A J Guttmann   +3 more
openalex   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

Home - About - Disclaimer - Privacy