Results 161 to 170 of about 40,538 (255)

The Anionically All‐Boron‐Based Anti‐Perovskites Cs3[BH4][B12H12] and Cs3[BF4][B12H12]

open access: yesZeitschrift für anorganische und allgemeine Chemie, EarlyView.
The anionically all‐boron‐based colorless anti‐perovskites Cs3[BH4][B12H12] and Cs3[BF4][B12H12] can be obtained by isothermal evaporation from aqueous solutions of the underlying pseudo‐binary components Cs2[B12H12] and Cs[BH4] or Cs[BF4]. At ambient conditions, Cs3[BH4][B12H12] crystallizes trigonally (R3¯$\overline{3}$m) and transforms reversibly ...
Ioannis Tiritiris   +3 more
wiley   +1 more source

Defect engineering in BaSnO<sub>3</sub> and SrSnO<sub>3</sub> thin films through nanoscale substrate patterning. [PDF]

open access: yesNat Commun
Ghosh S   +10 more
europepmc   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

open access: yesAdvanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li   +7 more
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

open access: yesAdvanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert   +15 more
wiley   +1 more source

Engineering SrTiO<sub>3</sub> Nanostructures for Enhanced Photocatalytic Performance: Unveiling the Influence of Titanium Precursors and Synthesis Temperature. [PDF]

open access: yesACS Omega
Thesing A   +8 more
europepmc   +1 more source

Coupled Ferroelectric–Photoelectrochemical in Water Reduction Over BiFeO3 Thin Film Heterostructure Modulated by Rare‐Earth Doping

open access: yesAdvanced Functional Materials, Volume 36, Issue 11, 5 February 2026.
Gd‐doped BFO (BGFO) exhibits a ∼2‐order reduction in leakage current owing to its lowest content of oxygen vacancies. This leads to a ∼2.5‐fold increase in remnant polarization. These improvements in BGFO effectively boost charge separation and transportation, resulting in the greatest incident photon‐to‐current efficiency of 12.9 ± 0.73% and a ∼1.5 ...
Ming‐Wei Chu   +7 more
wiley   +1 more source

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