Results 141 to 150 of about 144,488 (176)
Some of the next articles are maybe not open access.

Dependence of the Exchange Bias and Coercivity of [Pd/Ferromagnet]$_N$/FeMn Multilayers on the Stack Number$N$

IEEE Transactions on Magnetics, 2006
The dependencies of the stack number N on perpendicular exchange-biasing (Hex) and coercivity Hc) in [Pd/Co]N and [Pd/Co (or CoFe)]N/FeMn multilayers were investigated. With the help of the careful designs of layer structures, a series of samples whose surface anisotropies have the linear function N was prepared with constant bulk anisotropies.
H. Joo   +10 more
openaire   +1 more source

Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

physica status solidi c, 2009
AbstractInAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other
Zhou, Dayong   +10 more
openaire   +2 more sources

Electronic and transport properties for Ti3C2O2 under the influence of a vertical electric field and stacking number

Computational Materials Science, 2018
Abstract The effect of a vertical electric field on the structural, electronic, and transport properties of Ti3C2O2 with varying numbers of layers was systematically investigated by means of the first-principles method. This result demonstrated that the related properties of Ti3C2O2 could be effectively tuned by the stacking number and the vertical ...
Chenliang Li   +4 more
openaire   +1 more source

Observation of the intrinsic Gilbert damping constant in Co/Ni multilayers independent of the stack number with perpendicular anisotropy

Applied Physics Letters, 2013
We investigate the intrinsic Gilbert damping constant in perpendicular magnetic anisotropy Co/Ni multilayer system by means of an all-optical method. We find that the intrinsic Gilbert damping constant does not depend on the stack number and the perpendicular magnetic anisotropy when the magnetic field is high enough. In contrast, the extrinsic Gilbert
Song, Hyon-Seok   +6 more
openaire   +2 more sources

An evaluation of the accuracy of the ASTER GDEM and the role of stack number: a case study of Nisiros Island, Greece

Remote Sensing Letters, 2011
A reference digital elevation model (RDEM) produced by the Hellenic Military Geographical Service (HMGS) (Athens, Greece) is used to assess the vertical accuracy of the ASTER (advanced spaceborne thermal emission and reflection radiometer) global digital elevation model (GDEM) for a small volcanic island, Nisiros, in south-east Greece.
George Ch. Miliaresis   +1 more
openaire   +1 more source

Minimal effect of stacking number on intrinsic cleavage and shear behavior of Tin+1AlCn and Tan+1AlCn MAX phases

Journal of Applied Physics, 2018
MAX phases are layered carbides or nitrides with the general formula Mn+1AXn, which exhibit a unique combination of ceramic- and metal-like properties. The effect of stacking a number (determined by n) remains to be elucidated and a priori is not clear whether, for a given chemistry, n significantly changes the intrinsic deformation behavior of these ...
Woongrak Son   +6 more
openaire   +1 more source

Hydrodearomatization of petroleum fuel fractions on silica supported Ni–W sulphide with increased stacking number of the WS2 phase⋆

Fuel, 2003
Abstract Ni–W catalysts supported on commercial γ-alumina and silica displayed similar activity in dibenzothiophene hydrodesulfurization (DBT HDS), while the activity of the Ni–W/SiO2 catalyst in toluene hydrogenation (HYD) was 6 times higher compared with Ni–W/Al2O3.
openaire   +1 more source

Dependence of the AC loss on Interval and Stacking Number in $z$ Stacked GdBCO Coated Conductor

New Physics: Sae Mulli, 2021
H. C. RI*   +3 more
openaire   +1 more source

Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current density

2008
We demonstrate the achievement of multiple stacked InAs quantum dash and quantum dot lasers. The threshold current density reaches a minimum value of 680 A/cm2 for quantum dash lasers on InP (100) and 170 A/cm2 for quantum dot lasers on InP (311)B.
Zhou, Dayong   +9 more
openaire   +1 more source

Investigation of the Optimum Stacking Number of Stacked Nanowires for Logic Applications

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, 2017
W.-C. Huang, P. Su
openaire   +1 more source

Home - About - Disclaimer - Privacy