Results 261 to 270 of about 140,558 (270)
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Hydrodearomatization of petroleum fuel fractions on silica supported Ni–W sulphide with increased stacking number of the WS2 phase⋆

Fuel, 2003
Abstract Ni–W catalysts supported on commercial γ-alumina and silica displayed similar activity in dibenzothiophene hydrodesulfurization (DBT HDS), while the activity of the Ni–W/SiO2 catalyst in toluene hydrogenation (HYD) was 6 times higher compared with Ni–W/Al2O3.
openaire   +1 more source

Dependence of the AC loss on Interval and Stacking Number in $z$ Stacked GdBCO Coated Conductor

New Physics: Sae Mulli, 2021
H. C. RI*   +3 more
openaire   +1 more source

Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current density

2008
We demonstrate the achievement of multiple stacked InAs quantum dash and quantum dot lasers. The threshold current density reaches a minimum value of 680 A/cm2 for quantum dash lasers on InP (100) and 170 A/cm2 for quantum dot lasers on InP (311)B.
Zhou, Dayong   +9 more
openaire   +1 more source

Investigation of the Optimum Stacking Number of Stacked Nanowires for Logic Applications

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, 2017
W.-C. Huang, P. Su
openaire   +1 more source

G0410405 Effect of stacked numbers on pushed cutting behavior of stacked cardboards

The Proceedings of Mechanical Engineering Congress, Japan, 2014
Manabu SUDO, Shigeru NAGASAWA
openaire   +1 more source

Concordance of Stack Numbers to Catalogue Numbers

1976
Leila Ibrahim   +2 more
openaire   +1 more source

1013 Effect of rubber fastening and stacked numbers on pushed cutting behavior of stacked cardboards

The Proceedings of Conference of Hokuriku-Shinetsu Branch, 2014
Manabu SUDO, Sigeru Nagasawa
openaire   +1 more source

On the Stack Number and the Queue Number of the Bubble-Sort Graph

IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, 2016
openaire   +1 more source

Effect of Stacking Number of InGaAs Quantum Dot Active Layers on Circularly Polarized Electroluminescence Properties of Spin-Polarized Light-Emitting Diodes

Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials
Itsu Tanaka   +6 more
openaire   +1 more source

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