First-Principles Investigation of Interfacial Bonding, Stability, and Electronic Properties at the Fe(111)/Ti<sub>3</sub>SiC<sub>2</sub>(0001) Interface. [PDF]
Nanomaterials (Basel)Wang X, Li W, Peng Z, Yang X, Wang M.
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Machine learning-based prediction of soiling losses in photovoltaic modules under different cleaning frequencies: an experimental investigation. [PDF]
Sci RepShukla A, Pachauri RK, Walia R, Gupta V.
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Glass bead games: enumeration of possible polytypes based on two stacking vectors and applications to the iron-ore sinter phases SFCA and SFCA-I. [PDF]
Acta Crystallogr A Found AdvSalzmann MF +3 more
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Calculation of Austenite Generalized Stacking Fault Energy in M50NiL Steel. [PDF]
Materials (Basel)Ding Z, Guo J, Zhou L, Zhang X, Ma X.
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π-π Stacking origin of irreversible dispersibility of graphene oxide. [PDF]
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Giant Tunneling Electroresistance and Anisotropic Photoresponse in Sliding Ferroelectric Homojunctions Based on Bilayer Janus MoSSe. [PDF]
Nanomaterials (Basel)Yang H, Xu Y.
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3D memory technology, such as Micron's hybrid memory cube (HMC), has re-energized the architectural pursuit of computation very close to, or inside the memory chip. Such a design falls into the broader category of near-data processing (NDP). The motivation for such design is because the current Von Neumann architecture of chip-multiprocessors is ...
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Summary: Maintaining two stacks in memory is easily accomplished by placing them at opposite ends of memory and having them grow towards each other. The entire memory is readily available for stack items with this approach. Maintaining three stacks, however, presents more difficulty.
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