Results 241 to 250 of about 673,031 (326)
Magnetic‐Field Dependent VB− Spin Decoherence in Hexagonal Boron Nitrides: A First‐Principles Study
This study investigates the decoherence of the VB− defect in h‐BN under external magnetic fields using first‐principles quantum many‐body simulations. A transition boundary distinguishing distinct decoherence regimes is identified, with its dependence on isotopic composition.
Jaewook Lee +3 more
wiley +1 more source
Effect of Ground Stack for Additional Internal Force and Deformation of Underground Pipeline
Hao Xiong
openalex +1 more source
Single‐Step Synthesis of In‐plane 1T'‐2H Heterophase MoTe2 for Low‐Resistance Contacts
A single‐step CVD method is developed to synthesize seamless in‐plane 1T'‐2H MoTe2 heterophase junctions with precise phase control and uniform large‐area coverage. The resulting transistors, incorporating 1T' MoTe2 contacts and 2H MoTe2 channels, exhibit ultralow contact resistance, offering a scalable solution to the long‐standing challenge of ...
Ye Lin +9 more
wiley +1 more source
Improving dental disease diagnosis using a cross attention based hybrid model of DeiT and CoAtNet. [PDF]
Elazab N +4 more
europepmc +1 more source
Desain Metode Kerja Penggantian Instalasi Vertical Riser Flare Stack
Bambang Sugeng +3 more
openalex +2 more sources
While host structures are known to enhance the reversibility and safety of lithium metal deposition, their additional volume and weight often decrease the battery's energy density and specific energy. By combining a lightweight and porous scaffold of electrospun polymer with a thinner separator, this article demonstrates a simultaneous improvement of ...
Lennart Wichmann +6 more
wiley +1 more source
Stacking-Dependent Interlayer Excitons in BP/CrSe<sub>2</sub> van der Waals Heterostructure. [PDF]
Kumar N, Kolos M, Karlický F.
europepmc +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
Phase-Field Crystal Method for Bilayer Graphene. [PDF]
Qiao H, Liu K.
europepmc +1 more source

