Results 191 to 200 of about 707,372 (298)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Optimization Design of a Multi-String Standing Wave Electrospinning Apparatus Based on Electric Field Simulations. [PDF]

Polymers (Basel)
Chen X, Liang J, Tan X, Ding J, Xie W, Li C, Cai Y.   +6 more
europepmc   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Laboratory-based 3D X-ray standing-wave analysis of nanometre-scale gratings. [PDF]

J Appl Crystallogr
Matveevskii K, Nikolaev KV, Fallica R, Beckers D, Gateshki M, Kharchenko A, Spanjer B, Rogachev A, Yakunin S, Ackermann M, Makhotkin IA.   +10 more
europepmc   +1 more source

Balancing Electrons to Break the Activity‐Selectivity Trade‐Off in H2O2 Electrosynthesis

Advanced Functional Materials, EarlyView.
Carrier‐concentration balancing in CuS is achieved by coupling cobalt dopants with cobalt vacancies, converting CuS from p‐ to n‐type to accelerate 2e− ORR while withdrawing excess carriers to optimize *OOH binding for H2O2 desorption. The catalyst reaches 8.14 mol g−1 h−1 with >84% selectivity in 1.0 M KOH and drives robust electro‐Fenton dye ...
Hangning Liu, Changhui Sun, Luyao Wang, Yuhang Cheng, Yi Xin, Xuyun Guo, Hui Li, Valeria Nicolosi, Yuhai Dou, Peng Li, Tianyi Ma, Jie Wang   +11 more
wiley   +1 more source

A Waveguide Inline Binary Metasurface for Wavelength-Selective Transmission and Standing Wave Focusing. [PDF]

Nanomaterials (Basel)
Cho CH, Kim H.
europepmc   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Revealing the Hidden Role of Cd in p‐Type Mg3Sb2: Enhanced Thermoelectric Performance by Grain Boundary Segregation Engineering

Advanced Functional Materials, EarlyView.
The hidden role of Cd segregation at grain boundaries is revealed in p‐type Mg3Sb2 by atom probe tomography and other advanced characterizations. Grain boundary Cd enrichment suppresses the SbMg+ hole‐killer formation and lowers potential barriers, enhancing electrical conductivity.
Zhou Li, Deming Dong, Xiaoyu Yang, Jun Qian, Mengruizhe Kong, Han Wan, Ni Ma, Wei Bai, Pengfei Nan, Binghui Ge, Jiming Song, G. Jeffrey Snyder, Yuan Yu   +12 more
wiley   +1 more source

The Influence of Nonlinear High-Intensity Dynamic Processes on the Standing Wave Precession of a Non-Ideal Hemispherical Resonator. [PDF]

Sensors (Basel)
Cheng W, Ren S, Xi B, Tian Z, Ning Y, Huo Y.   +5 more
europepmc   +1 more source

Kinetic Regimes of Hydrogen Absorption in Thin Films

Advanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco, Sabine Pütter, Yury N. Khaydukov, Luca Silvi, Mariano A. Paulin, Attila Csik, Thomas Keller, Bernhard Keimer   +7 more
wiley   +1 more source