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Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

open access: yesAdvanced Functional Materials, EarlyView.
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra   +8 more
wiley   +1 more source

Joint estimation of SOC and SOH for lithium-ion batteries based on FOAMIUHF-UKF model. [PDF]

open access: yesSci Rep
Ye Z   +10 more
europepmc   +1 more source

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