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All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory
IEEE Electron Device Letters, 2018Jin Yang, Yuzhuo Yuan, Yunpeng Li
exaly
Worst Case Sampling Method to Estimate the Impact of Random Variation on Static Random Access Memory
IEEE Transactions on Electron Devices, 2015Changhwan Shin
exaly
High density COS/MOS 1024-bit static random access memory
IEEE Journal of Solid-State Circuits, 1975exaly
4096 bit and larger bipolar static random access memories
Microelectronics Reliability, 1981openaire +1 more source