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Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design
International Journal of Circuit Theory and Applications, 2021Erfan Abbasian, Morteza Gholipour
exaly
Nanoscale CMOS static random access memory (SRAM) design
2023Sunanda Ambulkar, Jitendra Kumar Mishra
openaire +1 more source
International Journal of Electrical Power and Energy Systems, 2021
Songkai Liu, Tao Zhang, Lihuang Liu
exaly
Songkai Liu, Tao Zhang, Lihuang Liu
exaly
A bit cell for a static random access memory
2018According to an aspect of the present inventive concept there is provided a bit cell for a Static Random Access Memory, SRAM, the bit cell comprising: a first and a second vertical stack of transistors arranged on a substrate, each stack including: a pull-up transistor, a pull-down transistor and a pass transistor, each transistor including a ...
Weckx, Pieter +3 more
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