Results 151 to 160 of about 184,298 (338)

Backward stochastic partial differential equations with jumps and application to optimal control of random jump fields [PDF]

, 2005
Bernt Øksendal, Frank Proske, Tusheng Zhang   +2 more
openalex   +1 more source

Tunable Magnetism and Intrinsic Exchange Bias in Al‐Substituted Terbium Iron Garnet

Advanced Materials, EarlyView.
Al substitution in terbium iron garnet thin films enables continuous tuning of the magnetic compensation temperature from 190 K to above room temperature. Near compensation, a giant intrinsic exchange bias emerges, whose sign and stochasticity can be controlled by external fields and cooling history. This approach provides new routes to engineer garnet
Takayuki Shiino, Matteo Fettizio, Saúl Estandía, Can Onur Avci   +3 more
wiley   +1 more source

Variational solutions for a class of fractional stochastic partial differential equations [PDF]

, 2005
David Nualart, Pierre-A. Vuillermot
openalex   +1 more source

A Primer on Stochastic Partial Differential Equations [PDF]

, 2008
These notes form a brief introductory tutorial to elements of Gaussian noise analysis and basic stochastic partial differential equations (SPDEs) in general, and the stochastic heat equation, in particular. The chief aim here is to get to the heart of the matter quickly. We achieve this by studying a few concrete equations only.
openaire   +2 more sources

Linear and Symmetric Artificial Synapses Driven by Hydrogen Bonding for Accurate and Reliable Neuromorphic Computing

Advanced Materials, EarlyView.
Hydrogen‐bond‐driven interface engineering enables highly linear and symmetric artificial synapses based on CsPbI3–PVA hybrids. This strategy suppresses trap states and guides directional ion migration, yielding stable optoelectronic plasticity. The devices achieve ultralow power operation and human‐like learning in neuromorphic networks, offering a ...
Min Jong Lee, Sang Heon Lee, Dong Gyu Lee, Tae Hyuk Kim, Yubhin Cho, Gyeong Min Lee, Sung Su Yoon, Seon Joong Kim, Hyungju Ahn, Tae Kyung Lee, Jae Won Shim   +10 more
wiley   +1 more source

Renormalisation of Stochastic Partial Differential Equations

EMS Newsletter, 2020
Bruned, Yvain, Hairer, Martin, Zambotti, Lorenzo   +2 more
openaire   +2 more sources

Soft and Strong: Elastic Conductors with Bio‐Inspired Self‐Protection

Advanced Materials, EarlyView.
A general reverse‐engineering approach is demonstrated for designing functional yarns that uses woven fabric architecture as a structural framework. The fabric‐based stretchable conductive yarns combine flexibility, high elasticity, low stiffness, self‐protection, and weavability with conventional textile processes. By fine‐tuning the number of elastic
Chenglong Zhang, Xiulun Yin, Chris Zhou, Xin Lu, Siying Wu, Ying Li, Addie Bahi, Sukhneet Kaur Dhillon, Orlando J. Rojas, Jinhua Jiang, Nanliang Chen, Frank K. Ko, John D. W. Madden   +12 more
wiley   +1 more source

Ice‐Templated Thermoresponsive Hydrogel Actuators with Fast, Low‐Hysteresis Actuation Cycles

Advanced Materials Interfaces, EarlyView.
The study demonstrates a synergistic fabrication concept that combines ice‐templating with in situ polymerization to produce semi‐interpenetrating network thermoresponsive hydrogels with aligned porous architectures. The thermoresponsive hydrogels exhibit rapid actuation and recovery, low hysteresis, and improved compressive strength.
Xi Zhang, Shazed Aziz, Zhonghua Zhu
wiley   +1 more source

Halide Perovskite Quantum Dots Form a Scalable Unified Platform for Resistive Memories, Crossbar Networks, Neuromorphic Synapses, and Field Effect Transistors

Advanced Materials Interfaces, EarlyView.
Halide perovskite quantum dots, with their flexible ABX3 lattice enabling collaborative electronic and ionic transport, offer scalable, low‐cost routes to resistive memories, opto‐electronic control, neuromorphic devices, and field‐effect transistors.
Hyojung Kim
wiley   +1 more source

Halide Perovskite Memristor Crossbar Arrays for Low Voltage in Memory Computing

Advanced Materials Interfaces, EarlyView.
From early devices to centimeter‐scale crossbars, halide‐perovskite memristors now deliver ultra‐low‐energy, multilevel switching. Yet ion migration, device variability, and sneak currents hinder scaling. Advances in self‐rectifying junctions, nonlinear interfaces, bias maps, and hybrid oxides enhance array stability.
Hyojung Kim
wiley   +1 more source